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SB820_04 PDF预览

SB820_04

更新时间: 2024-02-27 09:32:55
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
2页 40K
描述
SCHOTTKY BARRIER RECTIFIERS

SB820_04 数据手册

 浏览型号SB820_04的Datasheet PDF文件第2页 
DATA SHEET  
SB820~SB8100  
SCHOTTKY BARRIER RECTIFIERS  
Unit : inch (mm)  
8 Ampere  
TO-220AC  
CURRENT  
VOLTAGE  
20 to 100 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• Pb free product are available : 99% Sn above can meet Rohs environment  
substance directive request  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
MECHANICALDATA  
Case: TO-220AC full molded plastic package  
Terminals: Lead solderable per MIL-STD-202G, Method 208  
Polarity: As marked.  
.1(2.54)  
.1(2.54)  
Mounting Position: Any  
Weight: 0.08 ounces, 2.24grams.  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
PA R A M E TE R  
S YM B O L S B 820 S B 830 S B 840 S B 850 S B 860 S B 880 S B 8100 U N ITS  
M axim um R ecurrent P eak R everse Voltage  
V
V
R R M  
R M S  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
8
60  
42  
60  
80  
56  
80  
100  
70  
V
V
V
A
A
V
M axim um R M S Voltage  
M axim um D C B locking Voltage  
V
D C  
100  
M axim um A verage Forw ard C urrent .375"(9.5m m )  
I
AV  
lead length at Tc =100O  
C
P eak Forw ard S urge C urrent :8.3m s single half sine-  
w ave superim posed on rated load(JE D E C m ethod)  
IFS M  
150  
M axim um Forw ard Voltage at 8.0A  
V
F
0.55  
0.75  
0.85  
M axim um D C R everse C urrent TA =25O  
C
0.5  
50  
IR  
m A  
at R ated D C B locking Voltage TA =100O  
C
TypicalTherm alR esistance  
R θJC  
6
O C / W  
O C  
O perating Junction Tem perature R ang  
S torage Tem perature R ang  
T
J
-50 to +125  
-50 to +150  
T
J
,TS TG  
O C  
NOTES:  
Both Bonding and Chip structure are available.  
PAGE . 1  
STAD-JUN.25.2004  

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