Datasheet > SB820D_05

SB820D_05

更新时间： 2024-02-03 10:25:26

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
2页	427K
描述
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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SB820D_05 数据手册

DATA SHEET

SB820D~SB8150D

D²PAK SURFACE MOUNTSCHOTTKYBARRIER RECTIFIER

TO-263 / D²PAK

Unit: inch (mm)

8 Ampere

CURRENT

VOLTAGE

20 to 150 Volts

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

.189(4.8)

.137(4.4)

.409(10.4)

.387(9.80)

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

.055(1.4)

.047(1.2)

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

.236(6.0)

.197(5.0)

.026(0.7)

.011(0.3)

Pb free: 99% Sn above

.055(1.4)

.039(1.0)

.035(0.9)MAX

MECHANICALDATA

Case: TO-263/D²PAK molded plastic package

Terminals: Lead solderable per MIL-STD-202G, Method 208

Polarity: As marked.

.108(2.75)

.092(2.35)

.108(2.75)

.092(2.35)

blank

Mounting Position: Any

Weight: 0.06 ounces, 1.7 grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL

SB820D

SB830D

SB840D

SB850D

SB860D

SB880D SB8100D SB8150D

UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

150

105

150

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Current .375"(9.5mm)

lead length at Tc =100^O

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

150

Maximum Forward Voltage at 8.0A

0.55

0.75

0.85

0.92

Maximum DC Reverse Current TA=25^O

0.5

at Rated DC Blocking Voltage TA=100^O

Typical Thermal Resistance

RθJC

^OC

/ W

Operating Junction Temperature Rang

Storage Temperature Rang

-50 to +125

-50 to +150

^OC

TJ,TSTG

NOTES:

Both Bonding and Chip structure are available.

PAGE . 1

STAD-FEB.21.2005

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