Datasheet > SB820DCN-T3

SB820DCN-T3

更新时间： 2024-02-03 10:02:00

品牌	Logo	应用领域
WTE		功效瞄准线二极管
页数	文件大小	规格书
3页	47K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 20V V(RRM), Silicon, TO-263AB, TO-263, D2PAK-3/2

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB820DCN-T3 数据手册

WTE

POWER SEMICONDUCTORS

SB820DC – SB8100DC

8.0A D²PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

High Current Capability

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K

D²PAK/TO-263

Mechanical Data

Dim

Min

9.8

9.6

4.4

8.5

—

Max

10.4

10.6

4.8

Case: Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

PIN 1 -

PIN 3 -

9.1

Case PIN 2

0.7

Weight: 1.7 grams (approx.)

Mounting Position: Any

1.0

—

1.4

Potive CT

0.9

Marking: Type Number

PIN 1 +

PIN 3 +

1.2

0.3

2.35

1.4

Standard Packaging: 24mm Tape (EIA-481)

Case PIN 2

0.7

Negative CT

2.75

Suffix with “N”

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

820DC 830DC 840DC 850DC 860DC 880DC 8100DC

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

RMS Reverse Voltage

V^R(RMS)

I^O

Average Rectified Output Current

@T_C= 100°C

8.0

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 4.0A

V^FM

I^RM

0.55

0.75

0.85

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

C^j

400

K/W

°C

Typical Thermal Resistance Junction to Ambient

Operating and Storage Temperature Range

R^ꢀ^JA

T^j, T^STG

-50 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

SB820DC – SB8100DC

1 of 3

12 3

中文翻译

下载PDF

与SB820DCN-T3相关器件

型号	品牌	获取价格	描述	数据表
SB820DC-T3	WTE	获取价格	8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
SB820DC-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 20V V(RRM), Silicon, TO-263AB, ROHS COM
SB820D-T3	WTE	获取价格	8.0A D2PAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB820D-T3-LF	WTE	获取价格	暂无描述
SB820-E	LRC	获取价格	Schottky Barrier Rectifiers Reverse Voltage 20 to 100V
SB820F	WTE	获取价格	8.0A ISOLATION SCHOTTKY BARRIER RECTIFIER
SB820F	PANJIT	获取价格	SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB820F	PACELEADER	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIER
SB820F	TRSYS	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS
SB820F	WON-TOP	获取价格	Powerpack

与SB820DCN-T3相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

43
AIC1781A 电池充电控制器深度解析
2024-09-03

30
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

68
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

74

产品中心

服务支持

精选活动

关于我们

帮助中心

SB820DCN-T3

SB820DCN-T3 数据手册

与SB820DCN-T3相关器件

与SB820DCN-T3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SB820DCN-T3

SB820DCN-T3 数据手册

与SB820DCN-T3相关器件

与SB820DCN-T3相关文章

您还可以找

您在本页遇到什么问题？