Datasheet > SB820FCT_05

SB820FCT_05

更新时间： 2024-10-31 04:05:43

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管分离技术隔离技术
页数	文件大小	规格书
2页	428K
描述
ISOLATION SCHOTTKY BARRIER RECTIFIERS

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中文翻译

获取价格

数据手册

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SB820FCT_05 数据手册

DATA SHEET

SB820FCT~SB8150FCT

ISOLATION SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

ITO-220AB

8 Amperes

CURRENT

VOLTAGE

20 to 150 Volts

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

.130(3.3)

.114(2.9)

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters free wheeling , and polarlity

protection applications.

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Pb free: 99% Sn above

.055(1.4)

.039(1.0)

.032(.8)

MAX

MECHANICALDATA

.035(0.9)

.011(0.3)

Case: ITO-220AB full molded plastic package

Terminals: Lead solderable per MIL-STD-202G, Method 208

Polarity: As marked.

(2.55)

Positive CT

Mounting Position: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

SB820

FCT

SB830

FCT

SB840

FCT

SB850

FCT

SB860

FCT

SB880

FCT

SB8100

FCT

SB8150

FCT

PARAMETER

SYMBOL

UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

150

Maximum RMS Voltage

105

150

Maximum DC Blocking Voltage

100

Maximum Average Forward Current .375"(9.5mm)

lead length at Tc =100^O

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

150

Maximum Forward Voltage at 4.0A

0.55

0.75

0.85

0.92

Maximum DC Reverse Current TA=25^O

0.5

at Rated DC Blocking Voltage TA=100^O

Typical Thermal Resistance

RθJC

^OC / W

Operating Junction Temperature Rang

Storage Temperature Rang

-50 to +125

-50 to +150

^OC

,TSTG

^OC

Note.

Both Bonding and Chip structure are available.

PAGE . 1

STAD-FEB.21.2005

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