Datasheet > SB820CT_05

SB820CT_05

更新时间： 2024-01-20 09:17:45

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
2页	428K
描述
SCHOTTKY BARRIER RECTIFIERS

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SB820CT_05 数据手册

DATA SHEET

SB820CT~SB8150CT

SCHOTTKY BARRIER RECTIFIERS

Unit : inch (mm)

TO-220AB

8 Amperes

CURRENT

VOLTAGE

20 to 150 Volts

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

.419(10.66)

.387(9.85)

.196(5.00)

.163(4.16)

.139(3.55)

MIN

.054(1.39)

.045(1.15)

• Exceeds environmental standards of MIL-

S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Both normal and Pb free product are available :

Normal : 80~95% Sn, 5~20% Pb

Pb free: 99% Sn above

.038(0.96)

.019(0.50)

.025(0.65)MAX

MECHANICALDATA

Case: TO-220AB full molded plastic package

Terminals: Lead solderable per MIL-STD-202G, Method 208

Polarity: As marked.

.1(2.54)

Positive CT

Mounting Position: Any

Weight: 0.08 ounces, 2.24grams.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAMETER

SYMBOL SB820CT SB830CT SB840CT SB850CT SB860CT SB880CT SB8100CT SB8150CT UNITS

Maximum Recurrent Peak Reverse Voltage

RRM

RMS

100

150

105

150

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

Maximum Average Forward Current .375"(9.5mm)

150

0.75

lead length at Tc =100^O

Peak Forward Surge Current :8.3ms single half sine-

wave superimposed on rated load(JEDEC method)

FSM

Maximum Forward Voltage at 4.0A

0.55

0.85

0.92

Maximum DC Reverse Current TA=25^O

0.5

at Rated DC Blocking Voltage TA=100^O

Typical Thermal Resistance

RθJC

^OC / W

Operating Junction Temperature Rang

Storage Temperature Rang

-50 to +125

-50 to +150

^OC

,TSTG

^OC

Note.

Both Bonding and Chip structure are available.

PAGE . 1

STAD-FEB.21.2005

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