WTE
POWER SEMICONDUCTORS
Pb
SB8150D – SB8200D
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
ꢀ
Schottky Barrier Chip
C
ꢀ
Guard Ring Die Construction for
Transient Protection
A
J
ꢀ
ꢀ
ꢀ
ꢀ
Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
B
D
E
PIN 1
2
3
G
H
K
P
P
D2 PAK/TO-263
Min
Mechanical Data
ꢀ
Dim
Max
10.40
10.60
4.80
9.10
—
Case: D2PAK/TO-263, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
A
B
C
D
E
G
H
J
9.80
ꢀ
9.60
4.40
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1
PIN 3
8.50
Case, PIN 2
2.80
1.00
1.40
0.90
1.40
0.70
2.75
—
1.20
K
P
0.30
2.35
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB8150D
SB8200D
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 130°C
8.0
150
0.92
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 8.0A
VFM
IRM
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
0.5
50
mA
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Cj
350
3.0
pF
°C/W
°C
RθJC
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on minimum recommended pad size on FR-4 board.
SB8150D – SB8200D
1 of 4
© 2008 Won-Top Electronics