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SB8150D-T3-LF PDF预览

SB8150D-T3-LF

更新时间: 2024-10-29 19:45:35
品牌 Logo 应用领域
WTE 功效瞄准线二极管
页数 文件大小 规格书
4页 62K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3

SB8150D-T3-LF 数据手册

 浏览型号SB8150D-T3-LF的Datasheet PDF文件第2页浏览型号SB8150D-T3-LF的Datasheet PDF文件第3页浏览型号SB8150D-T3-LF的Datasheet PDF文件第4页 
WTE  
POWER SEMICONDUCTORS  
SB8150D – SB8200D  
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
C
Guard Ring Die Construction for  
Transient Protection  
A
J
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
B
D
E
PIN 1  
2
3
G
H
K
P
P
D2 PAK/TO-263  
Min  
Mechanical Data  
Dim  
Max  
10.40  
10.60  
4.80  
9.10  
Case: D2PAK/TO-263, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
A
B
C
D
E
G
H
J
9.80  
9.60  
4.40  
Polarity: See Diagram  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
Marking: Type Number  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
8.50  
Case, PIN 2  
2.80  
1.00  
1.40  
0.90  
1.40  
0.70  
2.75  
1.20  
K
P
0.30  
2.35  
All Dimensions in mm  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB8150D  
SB8200D  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 130°C  
8.0  
150  
0.92  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed  
on rated load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TA = 25°C  
@TA = 100°C  
0.5  
50  
mA  
Typical Junction Capacitance (Note 1)  
Typical Thermal Resistance (Note 2)  
Cj  
350  
3.0  
pF  
°C/W  
°C  
RθJC  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
2. Mounted on minimum recommended pad size on FR-4 board.  
SB8150D – SB8200D  
1 of 4  
© 2008 Won-Top Electronics  

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