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SB8150FCT PDF预览

SB8150FCT

更新时间: 2024-10-02 14:54:39
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 42K
描述
Powerpack

SB8150FCT 技术参数

是否Rohs认证:不符合生命周期:Active
零件包装代码:TO-220AB包装说明:R-PSFM-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.29Is Samacsys:N
其他特性:LOW LEAKAGE CURRENT应用:HIGH VOLTAGE
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.92 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:4 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:150 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

SB8150FCT 数据手册

 浏览型号SB8150FCT的Datasheet PDF文件第2页浏览型号SB8150FCT的Datasheet PDF文件第3页浏览型号SB8150FCT的Datasheet PDF文件第4页 
®
SB8150FCT – SB8200FCT  
8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
ITO-220  
C
Dim  
A
B
C
D
E
Min  
14.60  
9.70  
2.55  
Max  
15.40  
10.30  
2.85  
G
A
E
PIN1  
2
3
4.16  
D
13.00  
0.50  
3.00 Ø  
6.30  
4.20  
2.50  
0.50  
2.60  
2.29  
13.80  
0.75  
F
G
H
I
3.50 Ø  
6.90  
Mechanical Data  
F
Case: ITO-220, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
4.80  
P
J
2.90  
K
L
0.75  
I
3.30  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB8150FCT  
SB8200FCT  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
Total Device  
Per Diode  
8.0  
4.0  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
150  
0.9  
A
Forward Voltage per diode  
@IF = 4.0A  
VFM  
IRM  
CJ  
V
mA  
pF  
Peak Reverse Current  
@TJ = 25°C  
0.2  
10  
At Rated DC Blocking Voltage  
@TJ = 100°C  
Typical Junction Capacitance (Note 1)  
200  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
62  
4.5  
°C/W  
RMS Isolation Voltage Terminals to Case, t = 1 min  
Operating and Storage Temperature Range  
VISO  
1500  
V
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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