SB8150DC-T3

更新时间： 2024-10-29 04:05:43

品牌	Logo	应用领域
WTE		高压
页数	文件大小	规格书
4页	47K
描述
8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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SB8150DC-T3 数据手册

WTE

POWER SEMICONDUCTORS

SB8150DC

8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER

Features

Schottky Barrier Chip

Guard Ring Die Construction for

Transient Protection

Low Forward Voltage Drop

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage, High Frequency

Inverters, Free Wheeling, and Polarity

Protection Applications

PIN 1

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ K

D²PAK/TO-263

Min

Mechanical Data

Dim

Max

10.40

10.60

4.80

9.10

—

Case: D²PAK/TO-263, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

9.80

9.60

4.40

Polarity: See Diagram

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

PIN 1 -

PIN 3 -

8.50

Case, PIN 2

2.80

1.00

1.40

0.90

1.40

0.70

2.75

—

1.20

0.30

2.35

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

SB8150DC

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

150

RMS Reverse Voltage

V^R(RMS)

I^O

105

8.0

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed

on rated load (JEDEC Method)

I^FSM

150

Forward Voltage

@I_F= 4.0A

V^FM

I^RM

0.92

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

0.5

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

C^j

400

3.0

°C/W

°C

R^ꢀ^JC

Operating and Storage Temperature Range

T^j, T^STG

-65 to +150

Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Thermal resistance junction to case mounted on heatsink.

SB8150DC

1 of 4

12 3 4

中文翻译

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与SB8150DC-T3相关器件

型号	品牌	获取价格	描述	数据表
SB8150DC-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 4A, 150V V(RRM), Silicon, TO-263AB, ROHS CO
SB8150D-T3	WTE	获取价格	8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
SB8150D-T3-LF	WTE	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 150V V(RRM), Silicon, TO-263AB, ROHS CO
SB8150F	WTE	获取价格	8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
SB8150F	WON-TOP	获取价格	Powerpack
SB8150FCT	WTE	获取价格	8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB8150FCT	PANJIT	获取价格	ISOLATION SCHOTTKY BARRIER RECTIFIERS
SB8150FCT	WON-TOP	获取价格	Powerpack
SB8150FCT_08	WTE	获取价格	8.0A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
SB8150FCT-LF	WTE	获取价格	暂无描述

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