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SB8150 PDF预览

SB8150

更新时间: 2024-10-30 14:54:47
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 42K
描述
Powerpack

SB8150 技术参数

生命周期:Active零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.29
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
应用:HIGH VOLTAGE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:150 V
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

SB8150 数据手册

 浏览型号SB8150的Datasheet PDF文件第2页浏览型号SB8150的Datasheet PDF文件第3页浏览型号SB8150的Datasheet PDF文件第4页 
®
SB8150 – SB8200  
8.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Schottky Barrier Chip  
B
Guard Ring for Transient Protection  
Low Forward Voltage Drop  
Low Power Loss, High Efficiency  
High Surge Current Capability  
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
TO-220A  
C
Dim  
A
B
C
D
E
Min  
13.90  
9.80  
2.54  
3.56  
12.70  
0.51  
3.55 Ø  
5.75  
4.16  
2.03  
0.30  
1.14  
4.83  
Max  
15.90  
10.70  
3.43  
G
A
E
PIN1  
3
4.56  
D
14.73  
0.96  
F
G
H
I
4.09 Ø  
6.85  
Mechanical Data  
F
Case: TO-220A, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
5.00  
P
J
2.92  
K
L
0.65  
I
1.40  
P
5.33  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
Case  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
SB8150  
SB8200  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
150  
105  
200  
140  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
V
A
Average Rectified Output Current  
@TC = 100°C  
8.0  
150  
0.9  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
A
Forward Voltage  
@IF = 8.0A  
VFM  
IRM  
CJ  
V
mA  
pF  
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TJ = 25°C  
@TJ = 100°C  
0.2  
10  
Typical Junction Capacitance (Note 1)  
200  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Case  
RθJA  
RθJC  
73  
3.0  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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