SB1H100

更新时间： 2024-09-17 22:27:07

品牌	Logo	应用领域
威世 - VISHAY		整流二极管高压
页数	文件大小	规格书
2页	25K
描述
High Voltage Schottky Rectifiers

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中文翻译

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技术参数
数据手册

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SB1H100 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.69	Is Samacsys：	N
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.62 V	最大非重复峰值正向电流：	50 A
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	1 A	最大重复峰值反向电压：	100 V
子类别：	Rectifier Diodes	表面贴装：	NO
技术：	SCHOTTKY	Base Number Matches：	1

SB1H100 数据手册

SB1H90 and SB1H100

Vishay Semiconductor

New Product

High Voltage Schottky Rectifiers

Reverse Voltage 90 to 100V

Forward Current 1.0A

DO-204AL (DO-41)

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Low power loss, high efficiency

• For use in low voltage high frequency inverters,

free-wheeling, and polarity protection applications

1.0 (25.4)

MIN.

• Guardring for overvoltage protection

0.107 (2.7)

0.080 (2.0)

DIA.

Mechanical Data

Case: JEDEC DO-204AL molded plastic body

0.205 (5.2)

0.160 (4.1)

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

High temperature soldering guaranteed:

250°C/10 seconds at terminals

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches

and (millimeters)

1.0 (25.4)

MIN.

Weight: 0.012oz., 0.34g

Packaging Codes-Options:

0.034 (0.86)

1-5K per Bulk box, 50K/carton

0.028 (0.71)

DIA.

4-5.5K per 13” reel (52.4mm Tape), 22K/carton

23-3K per Ammo mag. (52.4mm Tape), 27K/carton

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbols

V_RRM

V_RMS

V_DC

SB1H90

SB1H100

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

100

I_F(AV)

1.0

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

I_FSM

I_RRM

Peak repetitive reverse surge current at t_p= 2.0µs, 1KH_Z

1.0

R_θJA

R_θJL

Maximum thermal resistance ⁽²⁾

°C/W

Maximum operating junction temperature

Storage temperature range

T_J

175

°C

T_STG

–55 to +175

Electrical Characteristics (T_A= 25°C unless otherwise noted)

I_F= 1.0A, T_J= 25°C

0.77

0.62

0.86

0.70

Maximum instantaneous

forward voltage at: ⁽¹⁾

I_F= 1.0A, T_J= 125°C

I_F= 2.0A, T_J= 25°C

I_F= 2.0A, T_J= 125°C

V_F

Maximum DC reverse current

at rated DC blocking voltage⁽¹⁾

T_J= 25°C

T_J= 125°C

1.0

0.5

µA

I_R

Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle

(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

Document Number 88716

25-Jun-02

www.vishay.com

中文翻译

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与SB1H100相关器件

型号	品牌	获取价格	描述	数据表
SB1H100-23	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
SB1H100-4	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41,
SB1H100-E3	VISHAY	获取价格	DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signa
SB1H100-E3/23	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT,
SB1H100-E3/51	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT,
SB1H100-E3/54	VISHAY	获取价格	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Perf
SB1H100-E3/73	VISHAY	获取价格	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Perf
SB1H100-E3-54	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H100-E3-73	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H100HE3/54	VISHAY	获取价格	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Perf

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