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SB1H90-HE3/54 PDF预览

SB1H90-HE3/54

更新时间: 2024-11-07 15:50:35
品牌 Logo 应用领域
威世 - VISHAY 瞄准线二极管
页数 文件大小 规格书
4页 77K
描述
1A, 90V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN

SB1H90-HE3/54 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-41包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
风险等级:5.69其他特性:HIGH RELIABILITY, LOW POWER LOSS, FREE WHEELING DIODE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-204ALJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:90 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

SB1H90-HE3/54 数据手册

 浏览型号SB1H90-HE3/54的Datasheet PDF文件第2页浏览型号SB1H90-HE3/54的Datasheet PDF文件第3页浏览型号SB1H90-HE3/54的Datasheet PDF文件第4页 
SB1H90 & SB1H100  
Vishay General Semiconductor  
New Product  
High-Voltage Schottky Rectifier  
High Barrier Technology for improved high temperature performance  
FEATURES  
• High barrier technology for improved high T  
j
• Guardring for overvoltage protection  
• Low power losses and high efficiency  
• Low forward voltage drop  
• Very low leakage current  
DO-204AL (DO-41)  
• High forward surge capability  
• High frequency operation  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
MAJOR RATINGS AND CHARACTERISTICS  
For use in middle voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity  
protection applications.  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
90 V, 100 V  
50 A  
MECHANICAL DATA  
0.62 V  
Case: DO-204AL (DO-41)  
IR  
1.0 µA  
Epoxy meets UL 94V-0 flammability rating  
Tj max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
VDC  
SB1H90  
90  
SB1H100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
A
63  
70  
Maximum DC blocking voltage  
Maximum average forward rectified current  
90  
100  
IF(AV)  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Voltage rate of change (rated VR)  
dv/dt  
IRRM  
TJ  
10000  
1.0  
V/µs  
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
Maximum operating junction temperature  
Storage temperature range  
175  
°C  
°C  
TSTG  
- 55 to + 175  
Document Number 88716  
18-May-06  
www.vishay.com  
1

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