Datasheet > SB1H100HE3/54

SB1H100HE3/54

更新时间： 2024-11-30 06:10:07

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	94K
描述
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

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SB1H100HE3/54 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.83
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.62 V	最大非重复峰值正向电流：	50 A
元件数量：	1	最高工作温度：	175 °C
最大输出电流：	1 A	最大重复峰值反向电压：	100 V
子类别：	Rectifier Diodes	表面贴装：	NO
Base Number Matches：	1

SB1H100HE3/54 数据手册

New Product

SB1H90 & SB1H100

Vishay General Semiconductor

High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• High barrier technology for improved high T

• Guardring for overvoltage protection

• Low power losses and high efficiency

• Low forward voltage drop

• Very low leakage current

• High forward surge capability

DO-204AL (DO-41)

• High frequency operation

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in middle voltage high frequency inverters,

freewheeling, dc-to-dc converters and polarity

protection applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

MECHANICAL DATA

Case: DO-204AL (DO-41)

Epoxy meets UL 94V-0 flammability rating

V_RRM

I_FSM

V_F

90 V, 100 V

50 A

0.62 V

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

I_R

1.0 µA

175 °C

T_Jmax.

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V_RRM

V_RMS

V_DC

SB1H90

SB1H100

100

UNIT

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

100

I_F(AV)

1.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

Voltage rate of change (rated V_R)

dV/dt

I_RRM

T_J

10 000

1.0

V/µs

Peak repetitive reverse surge current at t_p= 2.0 µs, 1 kHz

Maximum operating junction temperature

Storage temperature range

175

°C

T_STG

- 55 to + 175

Document Number: 88716

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

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与SB1H100HE3/54相关器件

型号	品牌	获取价格	描述	数据表
SB1H100-HE3/54	VISHAY	获取价格	1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
SB1H100HE3/73	VISHAY	获取价格	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Perf
SB1H100-HE3/73	VISHAY	获取价格	1A, 100V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN
SB1H100HE3-54	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H100HE3-73	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H90	VISHAY	获取价格	High Voltage Schottky Rectifiers
SB1H90	SUNMATE	获取价格	1A Plug-in Schottky diode 90V DO-41 series
SB1H90_08	VISHAY	获取价格	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Perf
SB1H90_09	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H90_15	VISHAY	获取价格	High-Voltage Schottky Rectifier

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