Datasheet > SB1H90

SB1H90

更新时间： 2024-11-06 22:09:51

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
2页	25K
描述
High Voltage Schottky Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB1H90 数据手册

SB1H90 and SB1H100

Vishay Semiconductor

New Product

High Voltage Schottky Rectifiers

Reverse Voltage 90 to 100V

Forward Current 1.0A

DO-204AL (DO-41)

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Low power loss, high efficiency

• For use in low voltage high frequency inverters,

free-wheeling, and polarity protection applications

1.0 (25.4)

MIN.

• Guardring for overvoltage protection

0.107 (2.7)

0.080 (2.0)

DIA.

Mechanical Data

Case: JEDEC DO-204AL molded plastic body

0.205 (5.2)

0.160 (4.1)

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

High temperature soldering guaranteed:

250°C/10 seconds at terminals

Polarity: Color band denotes cathode end

Mounting Position: Any

Dimensions in inches

and (millimeters)

1.0 (25.4)

MIN.

Weight: 0.012oz., 0.34g

Packaging Codes-Options:

0.034 (0.86)

1-5K per Bulk box, 50K/carton

0.028 (0.71)

DIA.

4-5.5K per 13” reel (52.4mm Tape), 22K/carton

23-3K per Ammo mag. (52.4mm Tape), 27K/carton

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbols

V_RRM

V_RMS

V_DC

SB1H90

SB1H100

Units

Maximum repetitive peak reverse voltage

Maximum RMS voltage

100

Maximum DC blocking voltage

Maximum average forward rectified current

100

I_F(AV)

1.0

Peak forward surge current

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

I_FSM

I_RRM

Peak repetitive reverse surge current at t_p= 2.0µs, 1KH_Z

1.0

R_θJA

R_θJL

Maximum thermal resistance ⁽²⁾

°C/W

Maximum operating junction temperature

Storage temperature range

T_J

175

°C

T_STG

–55 to +175

Electrical Characteristics (T_A= 25°C unless otherwise noted)

I_F= 1.0A, T_J= 25°C

0.77

0.62

0.86

0.70

Maximum instantaneous

forward voltage at: ⁽¹⁾

I_F= 1.0A, T_J= 125°C

I_F= 2.0A, T_J= 25°C

I_F= 2.0A, T_J= 125°C

V_F

Maximum DC reverse current

at rated DC blocking voltage⁽¹⁾

T_J= 25°C

T_J= 125°C

1.0

0.5

µA

I_R

Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle

(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas

Document Number 88716

25-Jun-02

www.vishay.com

中文翻译

下载PDF

与SB1H90相关器件

型号	品牌	获取价格	描述	数据表
SB1H90_08	VISHAY	获取价格	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Perf
SB1H90_09	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H90_15	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB1H90-1	VISHAY	获取价格	暂无描述
SB1H90-23	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
SB1H90-4	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Element, 1A, 90V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2
SB1H90-E3	VISHAY	获取价格	DIODE 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal
SB1H90-E3/54	VISHAY	获取价格	DIODE 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, DO-41, 2 PIN, Signal Dio
SB1H90-E3/73	VISHAY	获取价格	DIODE 1 A, 90 V, SILICON, SIGNAL DIODE, DO-204AL, ROHS COMPLIANT, DO-41, 2 PIN, Signal Dio
SB1H90HE3/54	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 90V V(RRM),

与SB1H90相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

19
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

16
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

39
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

37

产品中心

服务支持

精选活动

关于我们

帮助中心

SB1H90

SB1H90 数据手册

与SB1H90相关器件

与SB1H90相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SB1H90

SB1H90 数据手册

与SB1H90相关器件

与SB1H90相关文章

您还可以找

您在本页遇到什么问题？