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SB1H100-E3 PDF预览

SB1H100-E3

更新时间: 2024-11-09 20:37:03
品牌 Logo 应用领域
威世 - VISHAY 瞄准线二极管
页数 文件大小 规格书
4页 265K
描述
DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-204AL, LEAD FREE, PLASTIC, DO-41, 2 PIN, Signal Diode

SB1H100-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.7
其他特性:FREE WHEELING DIODE, LOW POWER LOSS外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
元件数量:1端子数量:2
最高工作温度:175 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

SB1H100-E3 数据手册

 浏览型号SB1H100-E3的Datasheet PDF文件第2页浏览型号SB1H100-E3的Datasheet PDF文件第3页浏览型号SB1H100-E3的Datasheet PDF文件第4页 
SB1H90 & SB1H100  
New Product  
Vishay General Semiconductor  
High-Voltage Schottky Rectifier  
High Barrier Technology for improved  
high temperature performance  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
90 V, 100 V  
50 A  
0.62 V  
DO-204AL (DO-41)  
IR  
1.0 µA  
Tj max.  
175 °C  
Features  
Typical Applications  
• High barrier technology for improved high T  
For use in middle voltage high frequency inverters,  
free wheeling, dc-to-dc converters and polarity pro-  
tection applications  
j
• Guardring for overvoltage protection  
• Low power losses and high efficiency  
• Low forward voltage drop  
Mechanical Data  
Case: DO-204AL (DO-41)  
Epoxy meets UL 94V-0 flammability rating  
• Very low leakage current  
• High forward surge capability  
• High frequency operation  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D E3 suffix for com-  
mercial grade  
• Meets MSL level 1, per J-STD-020C  
Polarity: Color band denotes the cathode end  
Maximum Ratings  
TA = 25 °C unless otherwise specified  
Parameter  
Symbols  
VRRM  
SB1H90  
90  
SB1H100  
100  
Units  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
63  
90  
70  
V
V
A
A
Maximum DC blocking voltage  
Maximum average forward rectified current  
100  
IF(AV)  
IFSM  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave superimposed  
on rated load  
Voltage rate of change (rated VR)  
dv/dt  
IRRM  
TJ  
10000  
1.0  
V/µs  
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
Maximum operating junction temperature  
Storage temperature range  
175  
°C  
°C  
TSTG  
- 55 to + 175  
Document Number 88716  
23-Dec-05  
www.vishay.com  
1

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