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SB1H100-E3-54 PDF预览

SB1H100-E3-54

更新时间： 2024-11-30 08:54:03
品牌 Logo 应用领域
威世 - VISHAY 高压
页数 文件大小 规格书
4页 71K
描述
High-Voltage Schottky Rectifier

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New Product  
SB1H90, SB1H100  
Vishay General Semiconductor  
High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• High barrier technology for improved high TJ  
• Guardring for overvoltage protection  
• Low power losses and high efficiency  
• Low forward voltage drop  
• Very low leakage current  
• High forward surge capability  
DO-204AL (DO-41)  
• High frequency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in middle voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity protection  
applications.  
IF(AV)  
VRRM  
IFSM  
VF  
1.0 A  
90 V, 100 V  
50 A  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
0.62 V  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
IR  
1.0 μA  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VRRM  
VRMS  
SB1H90  
90  
SB1H100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
V
A
63  
70  
Maximum DC blocking voltage  
Maximum average forward rectified current  
VDC  
90  
100  
IF(AV)  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Voltage rate of change (rated VR)  
dV/dt  
IRRM  
TJ  
10 000  
1.0  
V/μs  
A
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz  
Maximum operating junction temperature  
Storage temperature range  
175  
°C  
°C  
TSTG  
- 55 to + 175  
Document Number: 88716  
Revision: 04-Aug-09  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
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