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SB1H100-E3/54 PDF预览

SB1H100-E3/54

更新时间: 2024-11-30 06:10:07
品牌 Logo 应用领域
威世 - VISHAY 信号二极管瞄准线高压PC
页数 文件大小 规格书
4页 94K
描述
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

SB1H100-E3/54 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-41
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.23
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:403057Samacsys Pin Count:2
Samacsys Part Category:Schottky DiodeSamacsys Package Category:Diodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name:DO-204AL (DO-41)Samacsys Released Date:2018-03-12 13:06:58
Is Samacsys:N其他特性:LOW POWER LOSS
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.62 VJEDEC-95代码:DO-204AL
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:50 A元件数量:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT APPLICABLE
认证状态:Not Qualified最大重复峰值反向电压:100 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

SB1H100-E3/54 数据手册

 浏览型号SB1H100-E3/54的Datasheet PDF文件第2页浏览型号SB1H100-E3/54的Datasheet PDF文件第3页浏览型号SB1H100-E3/54的Datasheet PDF文件第4页 
New Product  
SB1H90 & SB1H100  
Vishay General Semiconductor  
High-Voltage Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
• High barrier technology for improved high T  
• Guardring for overvoltage protection  
• Low power losses and high efficiency  
• Low forward voltage drop  
J
• Very low leakage current  
• High forward surge capability  
DO-204AL (DO-41)  
• High frequency operation  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in middle voltage high frequency inverters,  
freewheeling, dc-to-dc converters and polarity  
protection applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
MECHANICAL DATA  
Case: DO-204AL (DO-41)  
Epoxy meets UL 94V-0 flammability rating  
VRRM  
IFSM  
VF  
90 V, 100 V  
50 A  
0.62 V  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
IR  
1.0 µA  
175 °C  
TJ max.  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
VRRM  
VRMS  
VDC  
SB1H90  
SB1H100  
100  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
90  
63  
90  
V
V
V
A
70  
Maximum DC blocking voltage  
Maximum average forward rectified current  
100  
IF(AV)  
1.0  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
A
Voltage rate of change (rated VR)  
dV/dt  
IRRM  
TJ  
10 000  
1.0  
V/µs  
A
Peak repetitive reverse surge current at tp = 2.0 µs, 1 kHz  
Maximum operating junction temperature  
Storage temperature range  
175  
°C  
°C  
TSTG  
- 55 to + 175  
Document Number: 88716  
Revision: 19-May-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

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