Datasheet > S9012T

S9012T

更新时间： 2024-11-18 08:55:39

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描述
PNP Epitaxial Silicon Transistor

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S9012T 数据手册

S9012T

PNP Epitaxial Silicon Transistor

RoHS Compliant Product

A suffix of "-C" specifies halogen & lead-free

TO-92

4.55±0.2

3.5±±. 2

FEATURE

Power dissipation

P_CM: 0.625 W Tamb=25

Collector current

I_CM:

-0.5

+±.±8

–±.±7

±.43

46^+±.1

±.

–±.1

Collector-base voltage

V_{(BR)CBO : -40 V}

(1.27 Typ.)

1: Emitter

2: Base

Operating and storage junction temperature range

1.25⁺–±^±.^.2²

Tj, T_stg:

-55 to +150

3: Collector

2.54±±. 1

ELECTRICAL CHARACTERISTICS˄Tamb=25ć

unless otherwise specified˅

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

Ic= -100A ˈ I_E=0

I_C= -1 mA , I_B=0

MIN

-40

-25

-5

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= -100Aˈ I_C=0

V_CB=- 40V , I_E=0

V_CB=-20V , I_E=0

-0.1

300

Collector cut-off current

I_CBO

Emitter cut-off current

I_EBO

V_EB=- 5V, I_C=0

h_FE(1)

V_CE=-1V, I_C=-50mA

V_CE=-1V, I_C= -500mA

I_C= -500 mA, I_B= -50mA

I_C= -500 mA, I_B=- 50mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

-0.6

-1.2

V_CE=-6V,I_C=-20mA,

f=30MHz

Transition frequency

150

MHz

f _T

CLASSIFICATION OF h_FE(1)

Rank

Range

64-91

78-112

96-135

112-166

144-202

190-300

Any changing of specification will not be informed individual

01-Jun-2002 Rev. A

Page 1 of 2

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