Datasheet > S9012-TO-92

S9012-TO-92

更新时间： 2024-09-25 01:25:23

品牌	Logo	应用领域
海德 - HDSEMI		/
页数	文件大小	规格书
4页	2235K
描述
TO-92 Plastic-Encapsulate Transistors

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中文翻译

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S9012-TO-92 数据手册

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR( P NP )

Features

TO- 9 2

●

High Collector Current.

● Complementary to S9013.

●

Excellent h_FELinearity.

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

-40

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Collector Current

-500

625

℃/W

℃

E B C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

P_C

R_ΘJA

T_j

416

150

Storage Temperature

T_stg

-55～+150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= -100μA, I_E=0

I_C= -1mA,I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-40

-25

-5

I_E=-100μA, I_C=0

V_CB=-40V, I_E=0

-0.1

400

-0.6

-1.2

μA

Collector cut-off current

I_CEO

V_CE=-20V, I_B=0

Emitter cut-off current

I_EBO

V_EB= -5V, I_C=0

DC current gain

h_FE

V_CE=-1V,I_C=-50mA

I_C=-500mA, I_B= -50mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

V_CE=-6V, I_C= -20mA

f=30MHz

Transition frequency

f_T

150

MHz

CLASSIFICATION OF h_FE

Rank

Range

64-91

78-112

96-135

112-166

144-202

190-300

300-400

igh Diode Semiconductor

12 3 4

中文翻译

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