JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SOT-323
S9012W TRANSISTOR (PNP)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
z
Complementary to S9013W
Excellent hFE linearity
z
MARKING: 2T1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
-40
V
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-5
Collector Current
-500
200
625
mA
mW
℃/W
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
PC
RΘJA
Operation Junction and
Storage Temperature Range
TJ,Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= -100μA, IE=0
IC= -1mA, IB=0
Min
-40
-25
-5
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
IE=-100μA, IC=0
VCB=-40V, IE=0
-0.1
-0.1
-0.1
400
-0.6
-1.2
μA
μA
μA
Collector cut-off current
ICEO
VCE=-20V, IB=0
Emitter cut-off current
IEBO
VEB= -5V, IC=0
DC current gain
hFE
VCE=-1V, IC= -50mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
120
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=-6V, IC= -20mA,
Transition frequency
fT
MHz
pF
f=30MHz
Collector output capacitance
Cob
5
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
L
H
J
120-200
200-350
300-400
Range
www.jscj-elec.com
1
Rev. - 2.0