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S9013 J3 PDF预览

S9013 J3

更新时间: 2024-11-17 05:34:43
品牌 Logo 应用领域
其他 - ETC 光电二极管
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2页 184K
描述
S9013 J3 PDF

S9013 J3 数据手册

 浏览型号S9013 J3的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD  
本资料由东莞长电代理:FUYAT CO.LTD提供0769-85388861  
SOT-23 Plastic-Encapsulate Transistors  
SOT-23  
S9013 TRANSISTOR (NPN)  
1. BASE  
FEATURES  
Complementary to S9012  
Excellent hFE linearity  
2. EMITTER  
3. COLLECTOR  
z
z
MARKING: J3  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
40  
Units  
V
25  
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
500  
300  
150  
-55-150  
mA  
mW  
PC  
Tj  
Storage Temperature  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= 100μA, IE=0  
IC= 0.1mA, IB=0  
IE=100μA, IC=0  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
μA  
0.1  
0.1  
0.1  
400  
VCB=40V, IE=0  
μA  
μA  
Collector cut-off current  
ICEO  
VCE=20V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 5V, IC=0  
120  
40  
hFE(1)  
VCE=1V, IC= 50mA  
VCE=1V, IC=500mA  
IC=500mA, IB= 50mA  
IC=500mA, IB= 50mA  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
0.6  
1.2  
V
V
VCE(sat)  
VBE(sat)  
VCE=6V, IC= 20mA  
f=30MHz  
Transition frequency  
150  
MHz  
fT  
CLASSIFICATION OF hFE(1)  
Rank  
L
H
J
Range  
120-200  
200-350  
300-400  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  

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