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S9013E PDF预览

S9013E

更新时间: 2024-11-17 20:07:07
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
2页 118K
描述
Transistor

S9013E 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.58
Base Number Matches:1

S9013E 数据手册

 浏览型号S9013E的Datasheet PDF文件第2页 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
S9013 TRANSISTOR (NPN)  
TO-92  
FEATURE  
z
z
Complementary to S9012  
Excellent hFE linearity  
1. EMITTER  
2. BASE  
MAXIMUM RATINGS TA=25unless otherwise noted  
3. COLLECTOR  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Value  
40  
Units  
V
1 2 3  
25  
V
5
V
Emitter-Base Voltage  
Collector Current -Continuous  
500  
625  
150  
-55-150  
mA  
mW  
PC  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
TJ  
Tstg  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC= 100μA , IE=0  
IC= 1mA , IB=0  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
IE= 100μA , IC=0  
VCB= 40V , IE=0  
VCE=20V , IE=0  
VEB= 5V, IC=0  
V
μA  
0.1  
0.1  
0.1  
400  
μA  
μA  
Collector cut-off current  
ICEO  
Emitter cut-off current  
IEBO  
hFE(1)  
VCE=1V, IC=50mA  
VCE=1V, IC= 500mA  
IC= 500mA, IB= 50mA  
IC= 500mA, IB= 50mA  
64  
40  
DC current gain  
hFE(2)  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE(sat)  
VBE(sat)  
0.6  
1.2  
V
V
Transition frequency  
VCE=6V,IC=20mA,f=30MHz  
150  
MHz  
fT  
CLASSIFICATION OF hFE(1)  
Rank  
D
E
F
G
H
I
J
Range  
64-91  
78-112  
96-135  
112-166  
144-202  
190-300  
300-400  

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