Datasheet > S9013E(TO-92)

S9013E(TO-92)

更新时间： 2024-11-18 09:01:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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1页	224K
描述
Transistor

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S9013E(TO-92) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

S9013 TRANSISTOR (NPN)

TO-92

FEATURE

Complementary to S9012

Excellent hFE linearity

1. EMITTER

2. BASE

MAXIMUM RATINGS Ta=25℃ unless otherwise noted

3. COLLECTOR

Symbol

V_CBO

V_CEO

V_EBO

I_C

Paramete

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

500

℃

P_C

625

T_J

Junction Temperature

Storage Temperature

150

T_stg

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V(BR)_CBO

V(BR)_CEO

V(BR)_EBO

I_CBO

Test conditions

I_C= 100μA , I_E=0

I_C= 1mA , I_B=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E= 100μA , I_C=0

V_CB= 40V , I_E=0

V_CE=20V , I_E=0

V_EB= 5V, I_C=0

μA

0.1

400

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=1V, I_C=50mA

V_CE=1V, I_C= 500mA

I_C= 500mA, I_B= 50mA

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(sat)

0.6

1.2

Transition frequency

V_CE=6V,I_C=20mA,f=30MHz

150

MHz

f_T

CLASSIFICATION OF h_FE(1)

Rank

Range

64-91

78-112

96-135

112-166

144-202

190-300

300-400

A,Apr,2011

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