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S9013

更新时间: 2024-11-18 08:55:39
品牌 Logo 应用领域
SECOS 晶体晶体管光电二极管
页数 文件大小 规格书
1页 227K
描述
General Purpose Transistor

S9013 数据手册

  
S9013  
NPN Silicon  
Elektronische Bauelemente  
General Purpose Transistor  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SOT-23  
Min  
FEATURES  
Collector  
3
Dim  
A
B
C
D
G
H
J
Max  
3
2.800 3.040  
1.200 1.400  
0.890 1.110  
0.370 0.500  
1.780 2.040  
0.013 0.100  
0.085 0.177  
0.450 0.600  
0.890 1.020  
2.100 2.500  
0.450 0.600  
Power dissipation  
PCM : 0.3 W  
Collector Current  
ICM : 0.5 A  
Collector-base voltage  
V(BR)CBO : 40 V  
1
1
2
Base  
2
A
Emitter  
L
3
K
L
S
C
Top View  
B
Operating & storage junction temperature  
1
2
Tj, Tstg : - 55OC ~ + 150OC  
S
V
G
V
All Dimension in mm  
H
J
D
K
O
ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
IE=0  
MIN  
40  
25  
5
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
V
V
(BR)CBO  
Ic= 100  
A
μ ,  
V
Ic= 0.1mA IB=0  
(BR)CEO  
V
(BR)EBO  
I =100  
A
IC=0  
μ ,  
E
ICBO  
VCB=40 V , IE=0  
0.1  
0.1  
A
A
A
μ
μ
μ
Collector cut-off current  
ICEO  
VCE=20V, IB=0  
Emitter cut-off current  
IEBO  
VEB= 5V, IC=0  
0.1  
HFE(1)  
HFE(2)  
VCE(sat)  
VBE(sat)  
VCE=1V, IC= 50mA  
VCE=1V, IC=500mA  
IC=500 mA, IB= 50mA  
IC=500 mA, IB= 50mA  
120  
40  
350  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
0.6  
1.2  
V
V
VCE=6V, I = 20mA  
C
Transition frequency  
150  
MHz  
fT  
f=30MHz  
CLASSIFICATION OF hFE(1)  
Rank  
L
H
Range  
120-200  
200-350  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2005 Rev.B  
Page 1 of 1  

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