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S9013

更新时间: 2024-09-25 14:53:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ /
页数 文件大小 规格书
4页 1328K
描述
SOT-23

S9013 数据手册

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD  
SOT-23 Plastic-Encapsulate Transistors  
S9013  
TRANSISTOR (NPN)  
SOT23  
FEATURES  
High Collector Current.  
z
z Complementary to S9012.  
z Excellent hFE Linearity.  
1. BASE  
MARKING  
2. EMITTER  
3. COLLECTOR  
J3= Device code  
J3  
Solid dot = Green molding compound device,  
if none,the normal device.  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Value  
40  
Unit  
V
V
Collector-Emitter Voltage  
25  
V
Emitter-Base Voltage  
5
Collector Current  
500  
300  
416  
mA  
mW  
/W  
PC  
Collector Power Dissipation  
Thermal Resistance From Junction To Ambient  
RΘJA  
Operation Junction and  
Storage Temperature Range  
TJ,Tstg  
-55+150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test  
conditions  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC=0.1mA, IE=0  
40  
25  
5
IC=1mA, IB=0  
V
IE=0.1mA, IC=0  
V
VCB=40V, IE=0  
0.1  
0.1  
0.1  
400  
uA  
uA  
uA  
Collector cut-off current  
ICEO  
VCE=20V, IB=0  
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
VBE  
VCE=1V, IC=50mA  
VCE=1V, IC=500mA  
IC=500mA, IB=50mA  
IC=500mA, IB=50mA  
VCB=1V,IC=10mA,  
VCE=6V,IC=20mA, f=30MHz  
VCB=6V, IE=0, f=1MHz  
120  
40  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
0.6  
1.2  
0.7  
V
V
V
Transition frequency  
fT  
150  
MHz  
pF  
Collector output capacitance  
Cob  
8
CLASSIFICATION OF hFE(1)  
RANK  
L
H
J
RANGE  
120-200  
200-350  
300-400  
www.jscj-elec.com  
1
Rev. - 2.1  

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