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S9013

更新时间: 2024-11-19 17:02:11
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固锝 - GOOD-ARK /
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S9013 数据手册

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S9013  
GOOD-ARK Electronics  
SOT-23 Plastic-Encapsulate Transistors  
Features  
Pb  
Cmplementary to S9012  
RoHS  
COMPLIANT  
300 mW Power Dissipation of 300mW  
High Stability and High Reliability  
Marking:  
J3  
SOT-23  
Mechanical Data  
Pin definition  
SOT-23 Small Outline Plastic Package  
Epoxy UL: 94V-0  
Mounting Position: Any  
Maximum Ratings & Electrical Characteristics(TA=25unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
V
V
VCBO  
VCEO  
VEBO  
40  
25  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter -Base Voltage  
5
V
500  
mA  
mW  
Collector Current-Continuous  
IC  
PC  
300  
Collector Power Dissipation  
Operating junction temperature range  
Storage temperature range  
150  
°C  
°C  
TJ  
-55-+150  
416  
TSTG  
RθJA  
Thermal Resistance from Junction to Ambient  
/W  
Electrical Specifications(TA=25unless otherwise noted)  
Limits  
Parameter  
Symbol  
Test Conditions  
Unit  
Min  
40  
25  
5
Max  
V(BR)CBO  
IC=100uA, IE=0  
Collector-base breakdown voltage  
V(BR)CEO  
V(BR)EBO  
ICEO  
ICBO  
IC=1mA, IB=0  
V
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IE=100uA, IC=0  
nA  
nA  
VCE=20V, IB=0  
VCB=40V, IE=0  
100  
100  
Collector cut-off current  
Emitter cut-off current  
IEBO  
VEB=5V, IC=0  
nA  
100  
400  
VCE=1V, IC=50mA  
VCE=1V, IC=500mA  
120  
40  
hFE  
DC current gain  
V
V
VCE(sat)  
VBE(sat)  
IC=500mA, IB=50mA  
IC=500mA, IB=50mA  
0.60  
Collector-emitter saturation voltage  
Base -emitter saturation voltage  
1.20  
0.70  
Base -emitter voltage  
Transition frequency  
Collector output capacitance  
VBE  
fT  
Cob  
VCB=1V, IC=10mA  
VCB=1V, IC=10mA  
VCE=6V, IC=20mA,f=30MHz  
V
MHz  
pF  
150  
8
Classlslcatlon OF hFE(1)  
RANK  
L
H
J
RANGE  
120-200  
200-350  
300-400  
www.goodark.com  
1
Doc.No.643141  

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