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S9013

更新时间: 2024-11-06 14:56:03
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
3页 1553K
描述
双极型晶体管

S9013 技术参数

极性:NPNCollector-emitter breakdown voltage:25
Collector Current - Continuous:0.5DC current gain - Min:64
DC current gain - Max:400Transition frequency:150
Package:TO-92Storage Temperature Range:-55-150
class:Transistors

S9013 数据手册

 浏览型号S9013的Datasheet PDF文件第2页浏览型号S9013的Datasheet PDF文件第3页 
S9013  
NPN Silicon Epitaxial Planar Transistor  
FEATURES  
A
SOT-23  
Min  
z
z
z
z
High Collector Current.(IC= 500mA).  
Dim  
A
Max  
3.10  
1.50  
Complementary To S9012.  
Excellent HFE Linearity.  
2.70  
E
B
1.10  
K
B
C
D
E
1.0 Typical  
0.4 Typical  
Power dissipation.(PC=300mW).  
0.35  
0.48  
2.00  
0.1  
J
D
G
H
J
1.80  
0.02  
G
0.1 Typical  
APPLICATIONS  
H
K
2.20  
2.60  
C
All Dimensions in mm  
z
High Collector Current.  
ORDERING INFORMATION  
Type No.  
S9013  
Marking  
J3  
Package Code  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
Collector-Base Voltage  
40  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
25  
V
5
V
Collector Current -Continuous  
Collector Dissipation  
500  
mA  
mW  
PC  
300  
Junction and Storage Temperature  
Tj,Tstg  
-55 to +150  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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