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S1M0V043B0J8 PDF预览

S1M0V043B0J8

更新时间: 2024-02-16 01:14:43
品牌 Logo 应用领域
精工 - SEIKO 静态存储器内存集成电路
页数 文件大小 规格书
12页 129K
描述
256KX16 STANDARD SRAM, 85ns, PBGA48, TFBGA-48

S1M0V043B0J8 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:VFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:85 nsJESD-30 代码:R-PBGA-B48
长度:10 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.4 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

S1M0V043B0J8 数据手册

 浏览型号S1M0V043B0J8的Datasheet PDF文件第2页浏览型号S1M0V043B0J8的Datasheet PDF文件第3页浏览型号S1M0V043B0J8的Datasheet PDF文件第4页浏览型号S1M0V043B0J8的Datasheet PDF文件第5页浏览型号S1M0V043B0J8的Datasheet PDF文件第6页浏览型号S1M0V043B0J8的Datasheet PDF文件第7页 
PF1061-06  
S1M0V043B0J8  
4M-bit Static RAM  
Super Low Voltage Operation and Low Current Consumption  
Access Time 85ns (2.4V)  
262,144 Words x 16-bit Asynchronous  
Wide Temperature Range  
DESCRIPTION  
The S1M0V043B0J8 is a 262,144words x 16-bit asynchronous, random access memory on a monolithic CMOS  
chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with  
back-up batteries. The asynchronous and static nature of the memory requires no external clock and no refreshing  
circuit. It is possible to control the data width by the data byte control. 3-state output allows easy expansion of  
memory capacity. The temperature range of the S1M0V043B0J8 is from –40 to 85°C, and it is suitable for the  
industrial products.  
FEATURES  
Fast Access time ........................ 85ns (2.4V)  
Low supply current ..................... LL Version  
Completely static........................ No clock required  
Supply voltage............................ 2.4V to 3.3V  
3-state output with wired-OR capability  
Non-volatile storage with back-up batteries  
Package ..................................... S1M0V043B0J  
TFBGA-48 pin (Tape CSP)  
BLOCK DIAGRAM  
A0  
A1  
A2  
A3  
A4  
A5  
10  
1024  
A6  
Memory Cell Array  
1024 x 256 x 16  
A7  
A8  
A9  
A10  
A11  
A12  
A13  
A14  
A15  
A16  
A17  
256x16  
8
256  
Column Gate  
CS1  
CS2  
16  
LB  
UB  
OE  
WE  
I/O Buffer  
I/O1  
I/O16  
Rev.1.2  
Rev.1.2  

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