生命周期: | Obsolete | 零件包装代码: | QFN |
包装说明: | VQCCN, | 针数: | 24 |
Reach Compliance Code: | unknown | HTS代码: | 8542.39.00.01 |
风险等级: | 5.84 | JESD-30 代码: | R-PQCC-N24 |
长度: | 4.5 mm | 功能数量: | 1 |
端子数量: | 24 | 最高工作温度: | 80 °C |
最低工作温度: | -30 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VQCCN | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER, VERY THIN PROFILE | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 标称供电电压: | 3 V |
表面贴装: | YES | 技术: | BICMOS |
电信集成电路类型: | RF AND BASEBAND CIRCUIT | 温度等级: | COMMERCIAL EXTENDED |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 宽度: | 3.5 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
S1M8674X01-V0T0 | SAMSUNG |
获取价格 |
RF and Baseband Circuit, BICMOS, PDSO20, ETSSOP-20 | |
S1M8821 | SAMSUNG |
获取价格 |
INTERGER RF/IF DUAL PLL | |
S1M8821X01-R0T0 | SAMSUNG |
获取价格 |
INTERGER RF/IF DUAL PLL | |
S1M8821X01-R0T0(20TSSOP) | SAMSUNG |
获取价格 |
PLL/Frequency Synthesis Circuit, BICMOS, PDSO20 | |
S1M8821X01-R0T0(24QFN) | SAMSUNG |
获取价格 |
PLL/Frequency Synthesis Circuit, BICMOS, PQCC24 | |
S1M8822 | SAMSUNG |
获取价格 |
INTERGER RF/IF DUAL PLL | |
S1M8822X01-R0T0 | SAMSUNG |
获取价格 |
INTERGER RF/IF DUAL PLL | |
S1M8822X01-R0T0(20TSSOP) | SAMSUNG |
获取价格 |
PLL/Frequency Synthesis Circuit, BICMOS, PDSO20 | |
S1M8822X01-R0T0(24QFN) | SAMSUNG |
获取价格 |
PLL/Frequency Synthesis Circuit, BICMOS, PQCC24 | |
S1M8823 | SAMSUNG |
获取价格 |
INTERGER RF/IF DUAL PLL |