Datasheet > S1M0W046B0J7

S1M0W046B0J7

更新时间： 2024-09-23 20:46:31

品牌	Logo	应用领域
精工 - SEIKO		静态存储器内存集成电路
页数	文件大小	规格书
12页	134K
描述
256KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

S1M0W046B0J7 数据手册

PF990-10

S1M0W046B0J1/7

4M-bit Static RAM

●Super Low Voltage Operation and Low Current Consumption

●Access Time 100ns (1.8V) / 70ns (2.2V)

●262,144 Words x 16-bit Asynchronous

●Wide Temperature Range

■ DESCRIPTION

The S1M0W046B0J1/7 is a 262,144words x 16-bit asynchronous, random access memory on a monolithic

CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing

circuit. It is possible to control the data width by the data byte control. Both the Input and output ports are TTL

compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the

S1M0W046B0J1/7 is from –40 to 85°C, and it is suitable for the industrial products.

■ FEATURES

● Fast Access time ........................ 100ns (at 1.8V) / 70ns (at 2.2V)

● Low supply current ..................... LL Version

● Completely static ........................ No clock required

● Supply voltage............................ 1.8V to 3.0V

● TTL compatible inputs and outputs

● 3-state output with wired-OR capability

● Non-volatile storage with back-up batteries

● Package ..................................... S1M0W046B0J

TFBGA-48 pin (Tape CSP)

■ BLOCK DIAGRAM

1024

Memory Cell Array

1024 x 256 x 16

A10

A11

A12

A13

A14

A15

A16

A17

256x16

256

Column Gate

I/O Buffer

I/O1

I/O16

Rev.1.4

12 3 4 5 6 7...12

中文翻译

下载PDF

与S1M0W046B0J7相关器件

型号	品牌	获取价格	描述	数据表
S1M-13	DIODES	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, PLASTIC, SMA, 2 PIN
S1M-13-F	DIODES	获取价格	1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
S1M1V045B0J7	SEIKO	获取价格	256KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48
S1M1V085B0J7	SEIKO	获取价格	512KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48
S1M1W043B0J7	SEIKO	获取价格	256KX16 STANDARD SRAM, 70ns, PBGA48, PLASTIC, FBGA-48
S1M8653BQ	SAMSUNG	获取价格	Baseband Circuit, BICMOS, PQFP80, 12 X 12 MM, QFP-80
S1M8656A	SAMSUNG	获取价格	CDMA/AMPS Dual Mode IF/ baseband IC
S1M8656A01-E0T0	SAMSUNG	获取价格	CDMA/AMPS Dual Mode IF/ baseband IC
S1M8656A01-F0T0	SAMSUNG	获取价格	CDMA/AMPS Dual Mode IF/ baseband IC
S1M8657	SAMSUNG	获取价格	TX IF/BBA WITH AGC