Datasheet > S1M0W046B0J7

S1M0W046B0J7

更新时间： 2024-11-28 20:46:31

品牌	Logo	应用领域
精工 - SEIKO		静态存储器内存集成电路
页数	文件大小	规格书
12页	134K
描述
256KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48

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S1M0W046B0J7 数据手册

PF990-10

S1M0W046B0J1/7

4M-bit Static RAM

●Super Low Voltage Operation and Low Current Consumption

●Access Time 100ns (1.8V) / 70ns (2.2V)

●262,144 Words x 16-bit Asynchronous

●Wide Temperature Range

■ DESCRIPTION

The S1M0W046B0J1/7 is a 262,144words x 16-bit asynchronous, random access memory on a monolithic

CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

with back-up batteries. The asynchronous and static nature of the memory requires no external clock or refreshing

circuit. It is possible to control the data width by the data byte control. Both the Input and output ports are TTL

compatible and 3-state output allows easy expansion of memory capacity. The temperature range of the

S1M0W046B0J1/7 is from –40 to 85°C, and it is suitable for the industrial products.

■ FEATURES

● Fast Access time ........................ 100ns (at 1.8V) / 70ns (at 2.2V)

● Low supply current ..................... LL Version

● Completely static ........................ No clock required

● Supply voltage............................ 1.8V to 3.0V

● TTL compatible inputs and outputs

● 3-state output with wired-OR capability

● Non-volatile storage with back-up batteries

● Package ..................................... S1M0W046B0J

TFBGA-48 pin (Tape CSP)

■ BLOCK DIAGRAM

1024

Memory Cell Array

1024 x 256 x 16

A10

A11

A12

A13

A14

A15

A16

A17

256x16

256

Column Gate

I/O Buffer

I/O1

I/O16

Rev.1.4

12 3 4 5 6 7...12

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