Datasheet > S1M1V085B0J7

S1M1V085B0J7

更新时间： 2024-11-28 20:09:23

品牌	Logo	应用领域
精工 - SEIKO		静态存储器内存集成电路
页数	文件大小	规格书
12页	131K
描述
512KX16 STANDARD SRAM, 70ns, PBGA48, TFBGA-48

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数据手册

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S1M1V085B0J7 数据手册

PF1200-01

S1M1V085B0J7

8M-bit Static RAM

●Super Low Voltage Operation and Low Current Consumption

●Access Time 70ns (2.4V)

●524,288 Words x 16-bit / 1,048,576 Words x 8-bit Asynchronous

●Wide Temperature Range

■ DESCRIPTION

The S1M1V085B0J7 is a 524,288 words x 16-bit (Word-mode) / 1,048,576 words x 8-bit (Byte-mode)

asynchronous, random access memory on a monolithic CMOS chip. It is possible to select Word-mode or Byte-

mode by CIO-pin: CIO=VDD for Word-mode and CIO=VSS for Byte-mode. Its very low standby power requirement

makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and

static nature of the memory requires no external clock and no refreshing circuit. It is possible to control the data

width by the data byte control for Word-mode. 3-state output allows easy expansion of memory capacity. The

temperature range of the S1M1V085B0J7 is from –40 to 85°C, and it is suitable for the industrial products.

■ FEATURES

● Fast Access time ........................ 70ns (2.4V)

● Low supply current ..................... LL Version

● Completely static........................ No clock required

● Supply voltage............................ 2.4V to 3.0V

● 3-state output with wired-OR capability

● Non-volatile storage with back-up batteries

● Package ..................................... S1M1V085B0J

TFBGA-48 pin (Tape CSP)

■ BLOCK DIAGRAM

1024

(1024)

Memory Cell Array

1024 x 8192

(

)

A10

A11

A12

A13

A14

A15

A16

A17

A18

512 x 16(1024 x 8)

Column Gate

512

(10)

(1024)

CS1

CS2

CIO

16(8)

I/O Buffer

I/O1

I/O16

( ): in case of Byte-mode

Rev.1.0

Rev.1.2

12 3 4 5 6 7...12

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