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S1M8831A01-G0T0

更新时间： 2024-11-27 21:54:51
品牌 Logo 应用领域
三星 - SAMSUNG 信号电路锁相环或频率合成电路信息通信管理
页数 文件大小 规格书
32页 249K
描述
FRACTIONAL-N RF/INTEGER-N IF DUAL PLL

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中文翻译

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S1M8831A01-G0T0 技术参数

生命周期：Obsolete零件包装代码：QFN
包装说明：VQCCN, LCC24,.17X.14,20针数：24
Reach Compliance Code：compliantHTS代码：8542.39.00.01
风险等级：5.84模拟集成电路 - 其他类型：PLL FREQUENCY SYNTHESIZER
JESD-30 代码：R-CQCC-N24长度：4.5 mm
功能数量：1端子数量：24
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装代码：VQCCN
封装等效代码：LCC24,.17X.14,20封装形状：RECTANGULAR
封装形式：CHIP CARRIER, VERY THIN PROFILE电源：3 V
认证状态：Not Qualified座面最大高度：1 mm
子类别：PLL or Frequency Synthesis Circuits最大供电电压 (Vsup)：4 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：BICMOS
温度等级：INDUSTRIAL端子形式：NO LEAD
端子节距：0.5 mm端子位置：QUAD
宽度：3.5 mmBase Number Matches：1

S1M8831A01-G0T0 数据手册

 浏览型号S1M8831A01-G0T0的Datasheet PDF文件第2页浏览型号S1M8831A01-G0T0的Datasheet PDF文件第3页浏览型号S1M8831A01-G0T0的Datasheet PDF文件第4页浏览型号S1M8831A01-G0T0的Datasheet PDF文件第5页浏览型号S1M8831A01-G0T0的Datasheet PDF文件第6页浏览型号S1M8831A01-G0T0的Datasheet PDF文件第7页 
FRACTIONAL-N RF/INTEGER-N IF DUAL PLL  
S1M8831A/33  
INTRODUCTION  
24-QFN-3.5´ 4.5  
The S1M8831A/33 is a Fractional-N frequency synthesizer with integrated  
prescalers, designed for RF operation up to 1.2GHz/K-PCS and for IF  
operation up to 520MHz. The fractional-N synthesizer allows fast-locking,  
low phase noise phase-locked loops to be built easily, thus having rapid  
channel switching and reducing standby time for extended battery life. The  
S1M8831A/33 based on å - D fractional-N techniques solves the fractional  
spur problems in other fractional-N synthesizers based on charge pump  
compensation. The synthesizer also has an additional feature that the  
PCS/CDMA channel frequency in steps of 10kHz can be accurately  
programmed.  
The S1M8831A/33 contains dual-modulus prescalers. The S1M8831A RF  
synthesizer adopts an 8/9 prescaler (16/17 for the S1M8833) and the IF  
synthesizer adopts an 8/9 prescaler. Phase detector gain is user-programmable for maximum flexibility to  
address IS-95 CDMA and IMT2000. Various program-controlled power down options as well as low supply  
voltage help the design of wireless cell phones having minimum power consumption.  
Using the Samsung's proprietary digital phase-locked-loop technique, the S1M8831A/33 has a linear phase  
detector characteristic and can be used for very stable, low noise PLLs. Supply voltage can range from 2.7V to  
4.0V. The S1M8831A/33 is available in a 24-QFN package.  
FEATURES  
·
High operating frequency dual synthesizer  
— S1M8831A: 0.71 to 1.2GHz(RF)/ 45 to 520MHz(IF)  
— S1M8833: 1.6 to 1.65GHz(RF)/ 45 to 520MHz(IF)  
·
·
·
Operating voltage range: 2.7 to 4.0V  
Low current consumption (S1M8831A: 5.0mA, S1M8833: 7.0mA)  
Selectable power saving mode (ICC = 1uA typical @ 3V)  
·
Dual-modulus prescaler and Fractional-N/Integer-N:  
— S1M8831A  
— S1M8833  
— S1M8831A/33  
(RF) 8/9  
(RF) 16/17  
(IF) 8/9  
Fractional-N  
Fractional-N  
Integer-N  
·
Excellent in-band phase noise ( – 85dBc/Hz @ PCS, -90dBc/Hz @CDMA)  
Improved fractional spurious performance ( < 80dBc)  
·
·
·
·
Frequency resolution (= 10kHz/64 @ fref = 9.84MHz)  
Fast channel switching time: < 500us  
Programmable charge pump output current: from 50uA to 800uA in 50uA steps  
Programmability via on-chip serial bus interface  
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