Datasheet > S1M1W043B0J7

S1M1W043B0J7

更新时间： 2024-11-28 21:21:15

品牌	Logo	应用领域
精工 - SEIKO		静态存储器内存集成电路
页数	文件大小	规格书
10页	110K
描述
256KX16 STANDARD SRAM, 70ns, PBGA48, PLASTIC, FBGA-48

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S1M1W043B0J7 数据手册

PF1195-02

S1M1W043B0J7

4M-bit Static RAM

●Super Low Voltage Operation and Low Current Consumption

●Access Time 70ns (1.65V)

●262,144 Words x 16-bit Asynchronous

●Wide Temperature Range

■ DESCRIPTION

The S1M1W043B0J7 is a 262,144 words x 16-bit asynchronous, random access memory on a monolithic CMOS

chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with

back-up batteries. The asynchronous and static nature of the memory requires no external clock and no refreshing

circuit. It is possible to control the data width by the data byte control. 3-state output allows easy expansion of

memory capacity. The temperature range of the S1M1W043B0J7 is from –40 to 85°C, and it is suitable for the

industrial products.

■ FEATURES

● Fast Access time ........................ 70ns (1.65V)

● Low supply current ..................... LL Version

● Completely static ........................ No clock required

● Supply voltage............................ 1.65V to 2.2V

● 3-state output with wired-OR capability

● Non-volatile storage with back-up batteries

● Package ..................................... S1M1W043B0J

PFBGA-48 pin (Plastic CSP)

■ BLOCK DIAGRAM

1024

Memory Cell Array

1024 x 256x 16

A10

A11

A12

A13

A14

A15

256x 16

A16

256

A17

Column Gate

CS1

CS2

I/O Buffer

I/O1

I/O16

Rev.1.0

12 3 4 5 6 7...10

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