Datasheet > S1M0W026B0J1

S1M0W026B0J1

更新时间： 2024-11-28 20:59:27

品牌	Logo	应用领域
精工 - SEIKO		静态存储器内存集成电路
页数	文件大小	规格书
12页	131K
描述
128KX16 STANDARD SRAM, 100ns, PBGA48, TFBGA-48

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S1M0W026B0J1 数据手册

PF988-10

S1M0W026B0J1/7

2M-bit Static RAM

●Super Low Voltage Operation and Low Current Consumption

●Access Time 100ns (1.8V) / 70ns (2.2V)

●131,072 Words x 16-bit Asynchronous

●Wide Temperature Range

■ DESCRIPTION

The S1M0W026B0J1/7 is a 131,072 words x 16-bit asynchronous, random access memory on a monolithic

CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage

with back-up batteries. The asynchronous and static nature of the memory requires no external clock and no

refreshing circuit. It is possible to contorol the data width by the data byte control. 3-state output allows easy

expansion of memory capacity. The temperature range of the S1M0W026B0J1/7 is from –40 to 85°C, and it is

suitable for the industrial products.

■ FEATURES

● Fast Access time ........................ 100ns (at 1.8V) / 70ns (at 2.2V)

● Low supply current ..................... LL Version

● Completely static........................ No clock required

● Supply voltage............................ 1.8V to 3.0V

● 3-state output with wired-OR capability

● Non-volatile storage with back-up batteries

● Package ..................................... S1M0W026B0J

TFBGA-48 pin (Tape CSP)

■ BLOCK DIAGRAM

A10

A11

A12

A13

A14

A15

A16

512

Memory Cell Array

512 x 256 x 16

256x16

256

Column Gate

I/O Buffer

I/O1

I/O16

Rev.1.4

12 3 4 5 6 7...12

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