Datasheet > RN2106CT(TPL3)

RN2106CT(TPL3)

更新时间： 2024-11-14 20:03:35

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
8页	197K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN2106CT(TPL3) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
最大集电极电流 (IC)：	0.05 A	最小直流电流增益 (hFE)：	120
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.05 W	子类别：	BIP General Purpose Small Signals
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2106CT(TPL3) 数据手册

RN2101CT ~ RN2106CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101CT, RN2102CT, RN2103CT

RN2104CT, RN2105CT, RN2106CT

Switching Applications

Unit: mm

Inverter Circuit Applications

0.6±0.05

0.5±0.03

Interface Circuit Applications

Driver Circuit Applications

３

•

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

Complementary to RN1101CT to RN1106CT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

1.BASE

RN2101CT

RN2102CT

RN2103CT

RN2104CT

RN2105CT

RN2106CT

4.7

2.EMITTER

3.COLLECOTR

CST3

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

RN2101CT to 2106CT

Collector-emitter voltage

−20

−10

−5

CBO

CEO

RN2101CT to 2104CT

Emitter-base voltage

EBO

RN2105CT, 2106CT

Collector current

−50

°C

Collector power dissipation

RN2101CT to 2106CT

Junction temperature

150

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2004-10

2014-03-01

12 3 4 5 6 7 8

中文翻译

下载PDF

与RN2106CT(TPL3)相关器件

型号	品牌	获取价格	描述	数据表
RN2106F	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Pur
RN2106FT	TOSHIBA	获取价格	暂无描述
RN2106FV	TOSHIBA	获取价格	暂无描述
RN2106MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2106MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2106MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2106MFV(TL3SEP)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2106MFV(TPL3)	TOSHIBA	获取价格	TRANSISTOR PRE-BIASED DIGITAL TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-416VAR, BIP General P
RN2107	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2107ACT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

与RN2106CT(TPL3)相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

28
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

11
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

13
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

34

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2106CT(TPL3)

RN2106CT(TPL3) 技术参数

RN2106CT(TPL3) 数据手册

与RN2106CT(TPL3)相关器件

与RN2106CT(TPL3)相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN2106CT(TPL3)

RN2106CT(TPL3) 技术参数

RN2106CT(TPL3) 数据手册

与RN2106CT(TPL3)相关器件

与RN2106CT(TPL3)相关文章

您还可以找

您在本页遇到什么问题？