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RN1970FE(TE85L)

更新时间: 2024-11-11 19:25:11
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 298K
描述
RN1970FE(TE85L)

RN1970FE(TE85L) 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

RN1970FE(TE85L) 数据手册

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RN1970FE,RN1971FE  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1970FE, RN1971FE  
Switching, Inverter Circuit, Interface Circuit and Driver  
Circuit Applications  
Unit: mm  
Two devices are incorporated into an Extreme-Super-Mini (6 pin)  
package.  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more compact  
equipment and save assembly cost.  
Complementary to RN2970FE, RN2971FE  
Equivalent Circuit  
C
R1  
B
JEDEC  
JEITA  
E
TOSHIBA  
2-2N1A  
Weight:0.003 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
Equivalent Circuit  
(top view)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
6
5
2
4
Collector-emitter voltage  
Emitter-base voltage  
5
V
Q2  
Collector current  
I
100  
mA  
mW  
°C  
°C  
Q1  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note 1)  
100  
C
T
j
150  
1
3
T
55 to 150  
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature,  
etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Note 1: Total rating  
Start of commercial production  
2000-05  
1
2014-03-01  

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