5秒后页面跳转
RN1972FS(TPL3) PDF预览

RN1972FS(TPL3)

更新时间: 2024-11-11 20:58:31
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 118K
描述
Digital Transistors 50mA 20volts 6Pin 22Kohms

RN1972FS(TPL3) 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.73
Base Number Matches:1

RN1972FS(TPL3) 数据手册

 浏览型号RN1972FS(TPL3)的Datasheet PDF文件第2页浏览型号RN1972FS(TPL3)的Datasheet PDF文件第3页浏览型号RN1972FS(TPL3)的Datasheet PDF文件第4页浏览型号RN1972FS(TPL3)的Datasheet PDF文件第5页浏览型号RN1972FS(TPL3)的Datasheet PDF文件第6页 
RN1972FS,RN1973FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1972FS,RN1973FS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Two devices are incorporated into a fine pitch small mold (6-pin) package  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enables the manufacture of ever more  
compact equipment and lowers assembly cost.  
1
6
5
2
Complementary to RN2972FS, RN2973FS  
4
3
Equivalent Circuit and Bias Resistor Values  
(E1)  
1.EMIITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
6.COLLECTOR1  
fS6  
JEDEC  
JEITA  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
TOSHIBA  
2-1F1C  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
20  
20  
V
V
Weight: 0.001 g (typ.)  
CBO  
Collector-emitter voltage  
Emitter-base voltage  
V
CEO  
EBO  
V
5
V
Collector current  
I
50  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
50  
C
T
150  
55~150  
j
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Equivalent Circuit (top view)  
6
5
2
4
Q2  
Q1  
1
3
1
2007-11-01  

与RN1972FS(TPL3)相关器件

型号 品牌 获取价格 描述 数据表
RN1972HFE TOSHIBA

获取价格

TRANSISTOR 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2
RN1972HFE(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP
RN1972HFE(TPL3,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP
RN1973 TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1973CT TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973CT(TE85L,F) TOSHIBA

获取价格

PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1973FS TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973FS(TPL3) TOSHIBA

获取价格

Digital Transistors Polarity=NPNx2 47Kohms
RN1973HFE TOSHIBA

获取价格

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications