Datasheet > RN1972HFE(TE85L,F)

RN1972HFE(TE85L,F)

更新时间： 2023-06-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	144K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP

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RN1972HFE(TE85L,F) 数据手册

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RN1972HFE,RN1973HFE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1972HFE,RN1973HFE

Switching, Inverter Circuit, Interface Circuit and Driver

Circuit Applications

Unit: mm

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

•

Complementary to RN2972HFE, RN2973HFE

Equivalent Circuit

JEDEC

JEITA

―

TOSHIBA

2−2N1A

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Weight:0.003g (typ.)

Equivalent Circuit

(top view)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

CBO

CEO

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

100

150

stg

−55~150

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6

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