Datasheet > RN1973CT(TE85L,F)

RN1973CT(TE85L,F)

更新时间： 2024-01-10 08:49:33

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	176K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

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RN1973CT(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.05 A
最小直流电流增益 (hFE)：	300	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.14 W
子类别：	BIP General Purpose Small Signals	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1973CT(TE85L,F) 数据手册

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RN1972CT,RN1973CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1972CT,RN1973CT

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

1.0±0.05

0.15±0.03

６

１

５

２

４

３

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

0.35±0.02

0.075±0.03

0.7±0.03

•

Complementary to RN2972CT, RN2973CT

Equivalent Circuit

1.EMITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

CST6

6.COLLECTOR1

JEDEC

JEITA

―

TOSHIBA

2-1K1A

Weight: 1.0 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

140

C(Note 1)

150

stg

−55 to 150

Note 1: Total rating

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-05-11

12 3 4 5 6

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与RN1973CT(TE85L,F)相关器件

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RN1973FS(TPL3)	TOSHIBA	获取价格	Digital Transistors Polarity=NPNx2 47Kohms
RN1973HFE	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973HFE(TE85L)	TOSHIBA	获取价格	RN1973HFE(TE85L)
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RN1A108M16025SS	SAMWHA	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 1
RN1A156M05011PA	SAMWHA	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 1
RN1A156M05011PB	SAMWHA	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 1
RN1A156M05011PC	SAMWHA	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 1
RN1A156M05011TS	SAMWHA	获取价格	Aluminum Electrolytic Capacitor, Non-polarized, Aluminum (wet), 10V, 20% +Tol, 20% -Tol, 1

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