Datasheet > 晶体管 > 小信号双极晶体管> RN1972CT

RN1972CT

更新时间： 2024-11-11 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号双极晶体管光电二极管驱动
页数	文件大小	规格书
6页	182K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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技术参数
数据手册

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RN1972CT 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-N6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.75	Is Samacsys：	N
其他特性：	BUILIT-IN BIAS RESISTOR	最大集电极电流 (IC)：	0.05 A
集电极-发射极最大电压：	20 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	300	JESD-30 代码：	R-PDSO-N6
元件数量：	2	端子数量：	6
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN1972CT 数据手册

RN1972CT,RN1973CT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1972CT,RN1973CT

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

1.0±0.05

0.15±0.03

６

１

５

２

４

３

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

0.35±0.02

0.075±0.03

0.7±0.03

•

Complementary to RN2972CT, RN2973CT

Equivalent Circuit

1.EMITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

CST6

6.COLLECTOR1

JEDEC

JEITA

―

TOSHIBA

2-1K1A

Weight: 1.0 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

°C

Collector power dissipation

Junction temperature

Storage temperature range

140

C(Note 1)

150

stg

−55 to 150

Note 1: Total rating

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-05-11

12 3 4 5 6

中文翻译

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与RN1972CT相关器件

型号	品牌	获取价格	描述	数据表
RN1972CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1972FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1972FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 50mA 20volts 6Pin 22Kohms
RN1972HFE	TOSHIBA	获取价格	TRANSISTOR 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2
RN1972HFE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP
RN1972HFE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP
RN1973	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1973CT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973CT(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC

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