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RN1971FS PDF预览

RN1971FS

更新时间: 2024-11-11 12:23:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 123K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN1971FS 技术参数

生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.49其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.05 A集电极-发射极最大电压:20 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):300
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN最大功率耗散 (Abs):0.05 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RN1971FS 数据手册

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RN1970FS,RN1971FS  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1970FS,RN1971FS  
Switching, Inverter Circuit, Interface Circuit and  
Driver Circuit Applications  
Unit: mm  
Two devices are incorporated into a fine pitch Small Mold (6 pin)  
package  
1.0±0.05  
0.8±0.05  
0.1±0.05  
0.1±0.05  
Incorporating a bias resistor into a transistor reduces parts count.  
1
6
5
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
2
Complementary to RN2970FS, RN2971FS  
4
3
Equivalent Circuit and Bias Resistor Values  
(E1)  
(E2)  
(B2)  
(C2)  
(B1)  
(C1)  
1.EMIITTER1  
2.EMITTER2  
3.BASE2  
4.COLLECTOR2  
5.BASE1  
fS6  
6.COLLECTOR1  
JEDEC  
JEITA  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1,Q2 comoon)  
TOSHIBA  
2-1F1C  
Weight: 0.001 g (typ.)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5
V
Collector current  
I
50  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P (Note 1)  
50  
C
T
150  
55~150  
j
T
stg  
Note:  
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Total rating  
Equivalent Circuit (top view)  
6
5
4
Q2  
Q1  
1
2
3
1
2007-11-01  

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