Datasheet > RN1971TE85R

RN1971TE85R

更新时间： 2024-09-23 15:49:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
6页	249K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

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技术参数
数据手册

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RN1971TE85R 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown	风险等级：	5.73
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	6 pF	集电极-发射极最大电压：	50 V
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	VCEsat-Max：	0.3 V
Base Number Matches：	1

RN1971TE85R 数据手册

RN1970,RN1971

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1970,RN1971

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z Including two devices in US6 (ultra super mini type 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2970~RN2971

Equivalent Circuit

JEDEC

―

JEITA

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

TOSHIBA

2-2J1B

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

Weight: 6.8mg (typ.)

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

200

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*: Total rating

Equivalent Circuit (Top View)

2007-11-01

12 3 4 5 6

中文翻译

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与RN1971TE85R相关器件

型号	品牌	获取价格	描述	数据表
RN1972CT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1972CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1972FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1972FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 50mA 20volts 6Pin 22Kohms
RN1972HFE	TOSHIBA	获取价格	TRANSISTOR 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2
RN1972HFE(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP
RN1972HFE(TPL3,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,40V V(BR)CEO,100MA I(C),TSOP
RN1973	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1973(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1973CT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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