Datasheet > 晶体管 > 小信号双极晶体管> RN1971FE

RN1971FE

更新时间： 2024-11-11 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
6页	282K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RN1971FE 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.49	其他特性：	BUILT IN BIAS RESISTOR
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	50 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	120
JESD-30 代码：	R-PDSO-F6	JESD-609代码：	e0
元件数量：	1	端子数量：	6
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.1 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	TIN LEAD
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz	Base Number Matches：	1

RN1971FE 数据手册

RN1970FE,RN1971FE

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN1970FE,RN1971FE

Switching, Inverter Circuit, Interface Circuit and Driver

Circuit Applications

Unit: mm

•

Two devices are incorporated into an Extreme-Super-Mini (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more compact

equipment and save assembly cost.

•

Complementary to RN2970FE, RN2971FE

Equivalent Circuit

JEDEC

JEITA

―

TOSHIBA

2-2N1A

Weight:0.003 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

(top view)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

100

150

−55~150

stg

Note:

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6

中文翻译

下载PDF

与RN1971FE相关器件

型号	品牌	获取价格	描述	数据表
RN1971FE(TE85L)	TOSHIBA	获取价格	RN1971FE(TE85L)
RN1971FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1971TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1971TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1971TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1972CT	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1972CT(TE85L)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC
RN1972FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN1972FS(TPL3)	TOSHIBA	获取价格	Digital Transistors 50mA 20volts 6Pin 22Kohms
RN1972HFE	TOSHIBA	获取价格	TRANSISTOR 100 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, EXTREME SUPERMINI, 2

与RN1971FE相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

7
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

8
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

31

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1971FE

RN1971FE 技术参数

RN1971FE 数据手册

与RN1971FE相关器件

与RN1971FE相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

RN1971FE

RN1971FE 技术参数

RN1971FE 数据手册

与RN1971FE相关器件

与RN1971FE相关文章

您还可以找

您在本页遇到什么问题？