是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 1.61 |
认证: | UL; IEC; VDE; ENEC-10 | 滤波器类型: | SINGLE PHASE EMI FILTER |
高度: | 12.6 mm | 长度: | 17.7 mm |
安装类型: | THROUGH HOLE MOUNT | 工作频率: | 50/60Hz Hz |
最高工作温度: | 100 °C | 最低工作温度: | -40 °C |
物理尺寸: | L17.7XB17.1XH12.6 (mm)/L0.697XB0.673XH0.496 (inch) | 额定电流: | 2 A |
额定电压: | 300 V | 宽度: | 17.1 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN112-3.6-02-0M4 | Schaffner |
获取价格 |
Current-compensated Chokes | |
RN112-4/02 | ETC |
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DROSSEL NETZ PCB 0.7MH 4.0A | |
RN112-4-02 | ETC |
获取价格 |
Current-compensated Chokes | |
RN112-4-02-0M7 | Schaffner |
获取价格 |
Current-compensated Chokes | |
RN112APC | SWITCH |
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Audio/RCA Connector, 2 Pole(s), Solid Lead Terminal, Jack, | |
RN1130F | TOSHIBA |
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TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP Genera | |
RN1130FT | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP Genera | |
RN1130MFV | TOSHIBA |
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TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP Genera | |
RN1130MFV(TL3KYOCE | TOSHIBA |
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon | |
RN1130MFV(TL3PAV) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |