Datasheet > RN1132FV(TPL3)

RN1132FV(TPL3)

更新时间： 2024-02-13 03:46:41

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	147K
描述
Small Signal Bipolar Transistor

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中文翻译

获取价格

技术参数
数据手册

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RN1132FV(TPL3) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

RN1132FV(TPL3) 数据手册

RN1131FV,RN1132FV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1131FV,RN1132FV

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

1.2±0.05

0.8±0.05

ꢀ

Built-in bias resistors

Simplified circuit design

Reduced quantity of parts and manufacturing process

Complementary to RN2131FV,RN2132FV

Equivalent Circuit

1.BASE

VESM

2.EMITTER

3.COLLECTOR

JEDEC

―

JEITA

Maximum Ratings

(Ta = 25°C)

TOSHIBA

2-1L1A

Weight: 0.0015 g (typ.)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

0.5mm

100

°C

0.45mm

Collector power dissipation

Junction temperature

P (Note)

150

0.45mm

0.4mm

150

Storage temperature range

−55~150

stg

Note: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mmt)

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Collector cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

―

= 50V, I = 0

―

100

700

0.3

―

CBO

Emitter cut-off current

―

= 5V, I = 0

EBO

DC current gain

―

= 5V, I = 1mA

120

―

Collector-emitter saturation voltage

Translation frequency

―

= 5mA, I = 0.25mA

0.1

250

CE (sat)

―

= 10V, I = 5mA

―

MHz

Collector output capacitance

―

= 10V, I = 0, f = 1MHz

―

RN1131FV

Input resistor

100

200

130

260

―

kΩ

RN1132FV

140

2004-07-09

12 3 4 5

中文翻译

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