Datasheet > RN1130MFV(TL3SAN)

RN1130MFV(TL3SAN)

更新时间： 2024-01-12 11:26:29

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
4页	166K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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中文翻译

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技术参数
数据手册

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RN1130MFV(TL3SAN) 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code：	unknown	风险等级：	5.77
其他特性：	BUILT IN BIAS RESISTANCE RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PDSO-F3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

RN1130MFV(TL3SAN) 数据手册

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RN1130MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1130MFV

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.2±0.05

0.8±0.05

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2130MFV

Equivalent Circuit

1.BASE

VESM

2.EMITTER

3.COLLECTOR

JEDEC

―

JEITA

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Example

(unit: mm)

0.5

0.45

1.15

0.4

0.45

Start of commercial production

0.4

2005-04

2014-03-01

12 3 4

中文翻译

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与RN1130MFV(TL3SAN)相关器件

型号	品牌	获取价格	描述	数据表
RN1130MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 50volts 100mA 3Pin 100Kohms x 100Kohms
RN1131FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP Genera
RN1131FV(TPL3)	TOSHIBA	获取价格	Small Signal Bipolar Transistor
RN1131MFV	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, VESM, 2-1L1A, 3 PIN, BIP Genera
RN1131MFV(TL3,T)	TOSHIBA	获取价格	TRANS PREBIAS NPN 0.15W VESM
RN1131MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
RN1131MFV(TPL3)	TOSHIBA	获取价格	Digital Transistors 50volts 100mA 3Pin 100Kohms x 0ohms
RN1132F	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, ESM, 3 PIN, BIP Genera
RN1132FT	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-1B1A, TESM, 3 PIN, BIP Genera
RN1132FV(TPL3)	TOSHIBA	获取价格	Small Signal Bipolar Transistor

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