Datasheet > RN1130MFV(TPL3)

RN1130MFV(TPL3)

更新时间： 2024-09-30 19:46:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	151K
描述
Digital Transistors 50volts 100mA 3Pin 100Kohms x 100Kohms

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中文翻译

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技术参数
数据手册

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RN1130MFV(TPL3) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.79	Base Number Matches：	1

RN1130MFV(TPL3) 数据手册

RN1130MFV

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1130MFV

Switching Applications

Unit: mm

Inverter Circuit Applications

Interface Circuit Applications

Driver Circuit Applications

1.2±0.05

0.8±0.05

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN2130MFV

Equivalent Circuit

1.BASE

VESM

2.EMITTER

3.COLLECTOR

JEDEC

―

JEITA

TOSHIBA

2-1L1A

Weight: 1.5 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characterisstic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55 to 150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 mm)

Land Pattern Example

(unit: mm)

0.5

0.45

1.15

0.4

0.45

0.4

2010-04-06

12 3 4

中文翻译

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