是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DPAK |
包装说明: | TO-252, 3 PIN | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.16 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 50 V | 最大漏极电流 (Abs) (ID): | 14 A |
最大漏极电流 (ID): | 14 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-252AA |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 48 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
RFD14N05LSM | FAIRCHILD |
类似代替 |
14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | |
STD12NF06LT4 | STMICROELECTRONICS |
功能相似 |
N-channel 60V - 0.08з - 12A - DPAK - IPAK STr | |
NTD3055L104T4G | ONSEMI |
功能相似 |
Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RFD14N05LSM9A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
RFD14N05SM | FAIRCHILD |
获取价格 |
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs | |
RFD14N05SM_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
RFD14N05SM9A | FAIRCHILD |
获取价格 |
14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs | |
RFD14N05SM9A | ONSEMI |
获取价格 |
N 沟道,功率 MOSFET,50V,14A,100mΩ | |
RFD14N05SM9A_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
RFD14N06 | INTERSIL |
获取价格 |
14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD14N06L | INTERSIL |
获取价格 |
14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD14N06LSM | INTERSIL |
获取价格 |
14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | |
RFD14N06LSM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal |