5秒后页面跳转
RD48F4000L0YTQ0 PDF预览

RD48F4000L0YTQ0

更新时间: 2024-11-14 21:06:27
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路闪存
页数 文件大小 规格书
106页 1308K
描述
Flash, 16MX16, 85ns, PBGA88, 8 X 10 MM, 1 MM HEIGHT, SCSP-88

RD48F4000L0YTQ0 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:VFBGA, BGA88,8X12,32
针数:88Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.37最长访问时间:85 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B88
JESD-609代码:e0长度:10 mm
内存密度:268435456 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:4,255端子数量:88
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA88,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:16K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:NO
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

RD48F4000L0YTQ0 数据手册

 浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第2页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第3页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第4页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第5页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第6页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第7页 
Intel StrataFlash® Wireless Memory  
(L18)  
28F640L18, 28F128L18, 28F256L18  
Datasheet  
Product Features  
High performance Read-While-Write/Erase  
— 85 ns initial access  
Security  
— OTP space:  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— 54 MHz with zero wait state, 14 ns clock-to-  
data output synchronous-burst mode  
— 25 ns asynchronous-page mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Burst suspend  
— Programmable WAIT configuration  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— Absolute write protection: V = GND  
PP  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
Software  
— 1.8 V low-power buffered programming at  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
7 µs/byte (Typ)  
Architecture  
— Intel® Flash Data Integrator optimized  
— Basic Command Set (BCS) and Extended  
Command Set (ECS) compatible  
— Asymmetrically-blocked architecture  
— Multiple 8-Mbit partitions: 64-Mbit and 128-  
Mbit devices  
— Common Flash Interface (CFI) capable  
— Multiple 16-Mbit partitions: 256-Mbit devices  
— Four 16-Kword parameter blocks: top or  
bottom configurations  
Quality and Reliability  
— Expanded temperature: –25° C to +85° C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (0.13 µm)  
Density and Packaging  
— 64-Kword main blocks  
— Dual-operation: Read-While-Write (RWW) or  
Read-While-Erase (RWE)  
— 64-, 128-, and 256-Mbit density in VF BGA  
packages  
— 128/0 and 256/0 density in SCSP  
— 16-bit wide data bus  
— Status Register for partition and device status  
Power  
— V (core) = 1.7 V - 2.0 V  
CC  
— V  
(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V  
CCQ  
— Standby current: 30 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current: 15 mA (Typ)  
at 54 MHz  
— Automatic Power Savings mode  
The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel  
StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides  
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-  
voltage, multi-level cell (MLC) technology.  
The multiple-partition architecture enables background programming or erasing to occur in one  
partition while code execution or data reads take place in another partition. This dual-operation  
architecture also allows a system to interleave code operations while program and erase  
operations take place in the background. The 8-Mbit or 16-Mbit partitions allow system  
designers to choose the size of the code and data segments. The L18 wireless memory device is  
manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-  
standard chip scale packaging.  
Order Number: 251902, Revision: 009  
April 2005  

与RD48F4000L0YTQ0相关器件

型号 品牌 获取价格 描述 数据表
RD48F4000L0YUQ0 NUMONYX

获取价格

Flash, 16MX16, 85ns, PBGA88,
RD48F4000L0ZTQ0 INTEL

获取价格

Flash, 16MX16, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80
RD48F4000M0YBB0 NUMONYX

获取价格

Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YBC0 NUMONYX

获取价格

Flash, 16MX16, 96ns, PBGA107,
RD48F4000M0YCB0 NUMONYX

获取价格

Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YFB0 NUMONYX

获取价格

Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YUB0 NUMONYX

获取价格

Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YUC0 NUMONYX

获取价格

Flash, 16MX16, 96ns, PBGA107,
RD48F4000P0XBQ0 INTEL

获取价格

Flash, 16MX16, 85ns, PBGA80, 8 X 11 MM, 1 MM HEIGHT, SCSP-88/80
RD48F4000P0XBQ0A NUMONYX

获取价格

Flash, 16MX16, 85ns, PBGA80, 8 X 11 MM, 1 MM HEIGHT, SCSP-88/80