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RD48F4000L0YTQ0 PDF预览

RD48F4000L0YTQ0

更新时间: 2024-01-02 22:36:46
品牌 Logo 应用领域
英特尔 - INTEL 内存集成电路闪存
页数 文件大小 规格书
106页 1308K
描述
Flash, 16MX16, 85ns, PBGA88, 8 X 10 MM, 1 MM HEIGHT, SCSP-88

RD48F4000L0YTQ0 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:VFBGA, BGA88,8X12,32
针数:88Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.37最长访问时间:85 ns
其他特性:SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE启动块:TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B88
JESD-609代码:e0长度:10 mm
内存密度:268435456 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
部门数/规模:4,255端子数量:88
字数:16777216 words字数代码:16000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:16MX16
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA88,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH页面大小:4 words
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:1.8 V编程电压:1.8 V
认证状态:Not Qualified座面最大高度:1 mm
部门规模:16K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.05 mA
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30切换位:NO
类型:NOR TYPE宽度:8 mm
Base Number Matches:1

RD48F4000L0YTQ0 数据手册

 浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第2页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第3页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第4页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第5页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第6页浏览型号RD48F4000L0YTQ0的Datasheet PDF文件第7页 
Intel StrataFlash® Wireless Memory  
(L18)  
28F640L18, 28F128L18, 28F256L18  
Datasheet  
Product Features  
High performance Read-While-Write/Erase  
— 85 ns initial access  
Security  
— OTP space:  
• 64 unique factory device identifier bits  
• 64 user-programmable OTP bits  
• Additional 2048 user-programmable OTP bits  
— 54 MHz with zero wait state, 14 ns clock-to-  
data output synchronous-burst mode  
— 25 ns asynchronous-page mode  
— 4-, 8-, 16-, and continuous-word burst mode  
— Burst suspend  
— Programmable WAIT configuration  
— Buffered Enhanced Factory Programming  
(BEFP) at 5 µs/byte (Typ)  
— Absolute write protection: V = GND  
PP  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
Software  
— 1.8 V low-power buffered programming at  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
7 µs/byte (Typ)  
Architecture  
— Intel® Flash Data Integrator optimized  
— Basic Command Set (BCS) and Extended  
Command Set (ECS) compatible  
— Asymmetrically-blocked architecture  
— Multiple 8-Mbit partitions: 64-Mbit and 128-  
Mbit devices  
— Common Flash Interface (CFI) capable  
— Multiple 16-Mbit partitions: 256-Mbit devices  
— Four 16-Kword parameter blocks: top or  
bottom configurations  
Quality and Reliability  
— Expanded temperature: –25° C to +85° C  
— Minimum 100,000 erase cycles per block  
— ETOX™ VIII process technology (0.13 µm)  
Density and Packaging  
— 64-Kword main blocks  
— Dual-operation: Read-While-Write (RWW) or  
Read-While-Erase (RWE)  
— 64-, 128-, and 256-Mbit density in VF BGA  
packages  
— 128/0 and 256/0 density in SCSP  
— 16-bit wide data bus  
— Status Register for partition and device status  
Power  
— V (core) = 1.7 V - 2.0 V  
CC  
— V  
(I/O) = 1.35 V - 2.0 V, 1.7 V - 2.0 V  
CCQ  
— Standby current: 30 µA (Typ) for 256-Mbit  
— 4-Word synchronous read current: 15 mA (Typ)  
at 54 MHz  
— Automatic Power Savings mode  
The Intel StrataFlash® wireless memory (L18) device is the latest generation of Intel  
StrataFlash® memory devices featuring flexible, multiple-partition, dual operation. It provides  
high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-  
voltage, multi-level cell (MLC) technology.  
The multiple-partition architecture enables background programming or erasing to occur in one  
partition while code execution or data reads take place in another partition. This dual-operation  
architecture also allows a system to interleave code operations while program and erase  
operations take place in the background. The 8-Mbit or 16-Mbit partitions allow system  
designers to choose the size of the code and data segments. The L18 wireless memory device is  
manufactured using Intel 0.13 µm ETOX™ VIII process technology. It is available in industry-  
standard chip scale packaging.  
Order Number: 251902, Revision: 009  
April 2005  

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