Datasheet > RD48F4000M0YUC0

RD48F4000M0YUC0

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
恒忆 - NUMONYX		/
页数	文件大小	规格书
141页	2256K
描述
Flash, 16MX16, 96ns, PBGA107,

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中文翻译

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数据手册

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RD48F4000M0YUC0 数据手册

Numonyx™ StrataFlash Cellular Memory

(M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Numonyx^™Flash Data Integrator

(Numonyx^™FDI) optimized

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Basic Command Set and Extended

Command Set compatible

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Order Number: 309823-10

November 2007

12 3 4 5 6 7...141

中文翻译

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与RD48F4000M0YUC0相关器件

型号	品牌	获取价格	描述	数据表
RD48F4000P0XBQ0	INTEL	获取价格	Flash, 16MX16, 85ns, PBGA80, 8 X 11 MM, 1 MM HEIGHT, SCSP-88/80
RD48F4000P0XBQ0A	NUMONYX	获取价格	Flash, 16MX16, 85ns, PBGA80, 8 X 11 MM, 1 MM HEIGHT, SCSP-88/80
RD48F4000P0XBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4000P0ZBQ0	MICRON	获取价格	Numonyx StrataFlash Embedded Memory
RD48F4000P0ZBQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4000P0ZBQ0	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RD48F4000P0ZBQ0A	NUMONYX	获取价格	暂无描述
RD48F4000P0ZBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4000P0ZTQ0	INTEL	获取价格	Intel StrataFlash Embedded Memory
RD48F4000P0ZTQ0	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory

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