Datasheet > RD48F4000L0ZTQ0

RD48F4000L0ZTQ0

更新时间： 2024-11-15 05:07:51

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
102页	1719K
描述
Flash, 16MX16, PBGA80, 8 X 10 MM, 1.20 MM HEIGHT, SCSP-88/80

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RD48F4000L0ZTQ0 数据手册

Intel StrataFlash® Wireless Memory

(L30)

28F640L30, 28F128L30, 28F256L30

Datasheet

Product Features

■ High performance Read-While-Write/Erase

— 85 ns initial access

■ Security

— OTP space:

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

— 52 MHz with zero wait state, 17 ns clock-to-

data output synchronous-burst mode

— 25 ns asynchronous-page mode

— 4-, 8-, 16-, and continuous-word burst mode

— Burst suspend

— Programmable WAIT configuration

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

• Additional 2048 user-programmable OTP bits

— Absolute write protection: V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

■ Software

— 1.8 V low-power buffered programming at

— 20 µs (Typ) program suspend

7 µs/byte (Typ)

— 20 µs (Typ) erase suspend

■ Architecture

— Intel^®Flash Data Integrator (FDI) optimized

— Basic Command Set (BCS) and Extended

Command Set (ECS) compatible

— Asymmetrically-blocked architecture

— Multiple 8-Mbit partitions: 64-Mbit and 128-

Mbit devices

— Common Flash Interface (CFI) capable

— Multiple 16-Mbit partitions: 256-Mbit devices

— Four 16-Kword parameter blocks: top or

bottom configurations

■ Quality and Reliability

— Expanded temperature: –25° C to +85° C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (0.13 µm)

■ Density and Packaging

— 64-Kword main blocks

— Dual-operation: Read-While-Write (RWW) or

Read-While-Erase (RWE)

— 64-, 128-, and 256-Mbit density in VF BGA

packages

— 128/0 and 256/0 Density in Stacked-CSP

— 16-bit wide data bus

— Status register for partition and device status

■ Power

— V_CC(core) = 1.7 V - 2.0 V

— V_CCQ(I/O) = 2.2 V - 3.3 V

— Standby current: 30 µA (Typ) for 256-Mbit

— 4-Word synchronous read current: 16 mA (Typ)

at 52 MHz

— Automatic Power Savings mode

The Intel StrataFlash^®wireless memory (L30) product is the latest generation of Intel

StrataFlash^®memory devices featuring flexible, multiple-partition, dual operation. It provides

high performance synchronous-burst read mode and asynchronous read mode using 1.8 V low-

voltage, multi-level cell (MLC) technology.

The multiple-partition architecture enables background programming or erasing to occur in one

partition while code execution or data reads take place in another partition. This dual-operation

architecture also allows a system to interleave code operations while program and erase

operations take place in the background.

The L30 device is manufactured using Intel^®0.13 µm ETOX™ VIII process technology. It is

available in industry-standard chip scale packaging.

Order Number: 251903, Revision: 008

January 2005

12 3 4 5 6 7...102

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与RD48F4000L0ZTQ0相关器件

型号	品牌	获取价格	描述	数据表
RD48F4000M0YBB0	NUMONYX	获取价格	Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YBC0	NUMONYX	获取价格	Flash, 16MX16, 96ns, PBGA107,
RD48F4000M0YCB0	NUMONYX	获取价格	Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YFB0	NUMONYX	获取价格	Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YUB0	NUMONYX	获取价格	Flash, 16MX16, 96ns, PBGA105,
RD48F4000M0YUC0	NUMONYX	获取价格	Flash, 16MX16, 96ns, PBGA107,
RD48F4000P0XBQ0	INTEL	获取价格	Flash, 16MX16, 85ns, PBGA80, 8 X 11 MM, 1 MM HEIGHT, SCSP-88/80
RD48F4000P0XBQ0A	NUMONYX	获取价格	Flash, 16MX16, 85ns, PBGA80, 8 X 11 MM, 1 MM HEIGHT, SCSP-88/80
RD48F4000P0XBQ0A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RD48F4000P0ZBQ0	MICRON	获取价格	Numonyx StrataFlash Embedded Memory

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